Correlation of photoluminescence measurements with the composition and electronic properties of chemically etched CdTe surfaces

Sobiesierski, Z.; Dharmadasa, I. M.; Williams, R. H.
December 1988
Applied Physics Letters;12/26/1988, Vol. 53 Issue 26, p2623
Academic Journal
We have performed photoluminescence (PL) measurements on chemically etched single-crystal p-CdTe. In addition, x-ray photoemission measurements have been used as a guide to surface stoichiometry for each chemical treatment. The relative intensities of the 0.875±0.005 eV and 1.125±0.005 eV PL bands are seen to be linked to the preferential depletion of either Cd or Te from the CdTe surface. Furthermore, the energies of these deep level transitions measured at T=4 K show remarkable agreement with the two values of Schottky barrier, [uppercase_phi_synonym]b=0.72±0.02 eV and [uppercase_phi_synonym]b=0.93±0.02 eV, normally obtained at room temperature for Au and Sb contacts to n-CdTe.


Related Articles

  • Photoluminescence in CdTe grown on GaAs substrates by molecular beam epitaxy. Leopold, D. J.; Ballingall, J. M.; Wroge, M. L. // Applied Physics Letters;11/24/1986, Vol. 49 Issue 21, p1473 

    Single-crystal epitaxial layers of (100) and (111) oriented CdTe were grown on (100) oriented GaAs substrates by molecular beam epitaxy. Low-temperature (4.2 K) photoluminescence spectra exhibit free-exciton and bound-exciton peaks having linewidths on the order of 2 meV for both CdTe...

  • Influence of Cd vacancies on the photoluminescence of CdTe. Figueroa, Juan M.; Sánchez-Sinencio, F.; Mendoza-Alvarez, J. G.; Zelaya, O.; Vázquez-López, C.; Helman, J. S. // Journal of Applied Physics;7/1/1986, Vol. 60 Issue 1, p452 

    Focuses on the influence of cadmium on the narrow band and bound excitation peak of the cadmium-tellurium (CdTe) photoluminescence spectrum. Use of an Air Products Displex helium cryogenic system; Cause of the decrease of both the photocurrent and the photoluminescence; Industrial uses of...

  • Does the low-temperature Arrhenius plot of the photoluminescence intensity in CdTe point towards... Krustok, Juri; Collan, Heikki // Journal of Applied Physics;2/1/1997, Vol. 81 Issue 3, p1442 

    Compares experimental photoluminescence (PL) bands of different energies for cadmium tellurium (CdTe) samples. Temperature variation modeling with two nonradiative thermal activation energies; Thermal quenching parameters.

  • Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe. Babentsov, V. N. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2006, Vol. 9 Issue 3, p94 

    The defects in CdTe and CdSe nanocrystals were studied by comparing the photoluminescence spectra and cyclic voltammetry dependences, which enabled us to identify two main electron levels in CdTe and four in CdSe NCs. In CdTe nanocrystals these levels are: a hole trap at the energy EV + 0.5 eV...

  • Effect of Grain Boundaries on the Properties of Cadmium Telluride Grown under Nonequilibrium Conditions. Ushakov, V. V.; Klevkov, Yu. V. // Semiconductors;Nov2003, Vol. 37 Issue 11, p1259 

    Microphotoluminescence spectroscopy and imaging were used to study the effect of grain boundaries on the properties of textured CdTe polycrystals with a single-crystal grain size of 1�2 mm grown under nonequilibrium conditions. The technological procedure included low-temperature synthesis...

  • Pressure Dependence of Intersubband Transitions in HgTe/Hg0.3Cd0.7Te Superlattices. Becker, C. R.; Latussek, V.; Landwehr, G.; Bini, R.; Ulivi, L. // Journal of Electronic Materials;Jun2005, Vol. 34 Issue 6, p811 

    The optical absorption coefficient of HgTe/Hg0.3Cd0.7Te superlattices (SLs) and its pressure dependence has been investigated at hydrostatic pressures up to 30 kbar at room temperature. The corresponding intersubband transition energies result from a comparison of experimental and theoretical...

  • Optically pumped laser action and photoluminescence in HgCdTe layer grown on (211) CdTe by metalorganic chemical vapor deposition. Ravid, A.; Sher, A.; Cinader, G.; Zussman, A. // Journal of Applied Physics;6/1/1993, Vol. 73 Issue 11, p7102 

    Presents a study which analyzed photopumped laser action and photoluminescence (PL) in HgCdTe layers grown by metalorganic chemical vapor deposition (MOCVD) on oriented cadmium (Cd) tellurium (Te) substrates. Discussion on the PL spectrum of the HgCdTe layer of the as-grown substrate;...

  • Spatially Resolved Photoluminescence and Transmission Spectra of HgCdTe. Furstenberg, Robert; White, Jeffrey O.; Olson, Gregory L. // Journal of Electronic Materials;Jun2005, Vol. 34 Issue 6, p791 

    We report new high-resolution scanning photoluminescence (PL) experiments in the mid-infrared (IR) portion of the spectrum. The samples investigated were Hg0.7Cd0.3Te epilayers grown on Cd0.96Zn0.04Te substrates. The influence of macrodefects and the annealing of samples on the PL signal were...

  • Features of Multilayer CdTe/ZnTe Quantum Dot Structures: Optical Studies. Bagaev, Victor S.; Onishchenko, Evgeny E. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p755 

    Studies of multilayer CdTe/ZnTe quantum-dot (QD) structures with different thickness of ZnTe spacer layer grown on a thick CdTe buffer layer have been carried out by optical spectroscopy methods. A complicated strain-distribution pattern within the structure with the thinnest ZnTe spacer layer...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics