TITLE

Correlation of photoluminescence measurements with the composition and electronic properties of chemically etched CdTe surfaces

AUTHOR(S)
Sobiesierski, Z.; Dharmadasa, I. M.; Williams, R. H.
PUB. DATE
December 1988
SOURCE
Applied Physics Letters;12/26/1988, Vol. 53 Issue 26, p2623
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have performed photoluminescence (PL) measurements on chemically etched single-crystal p-CdTe. In addition, x-ray photoemission measurements have been used as a guide to surface stoichiometry for each chemical treatment. The relative intensities of the 0.875±0.005 eV and 1.125±0.005 eV PL bands are seen to be linked to the preferential depletion of either Cd or Te from the CdTe surface. Furthermore, the energies of these deep level transitions measured at T=4 K show remarkable agreement with the two values of Schottky barrier, [uppercase_phi_synonym]b=0.72±0.02 eV and [uppercase_phi_synonym]b=0.93±0.02 eV, normally obtained at room temperature for Au and Sb contacts to n-CdTe.
ACCESSION #
9829372

 

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