Temperature dependence of interstitial oxygen diffusion in antimony-doped Czochralski silicon

Oates, A. S.; Lin, W.
December 1988
Applied Physics Letters;12/26/1988, Vol. 53 Issue 26, p2659
Academic Journal
We have measured directly the diffusivity of interstitial oxygen in Sb-doped Czochralski silicon in the temperature range 750–1150 °C. Using secondary-ion mass spectroscopy of outdiffusion profiles, we show that the diffusivity is the same as that for lightly B-doped crystals heated under identical conditions over the temperature range studied. We briefly discuss the implication of these results upon oxygen precipitation mechanisms in Sb-doped silicon.


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