Growth of GaAs-Al-GaAs by migration-enhanced epitaxy

Tadayon, Bijan; Tadayon, Saied; Spencer, M. G.; Harris, G. L.; Rathbun, L.; Bradshaw, J. T.; Schaff, W. J.; Tasker, P. J.; Eastman, L. F.
December 1988
Applied Physics Letters;12/26/1988, Vol. 53 Issue 26, p2664
Academic Journal
The GaAs-Al-GaAs structure is grown using migration-enhanced epitaxy (MEE) method at low temperature on a molecular beam epitaxy machine. With MEE the interdiffusion between Al and GaAs is reduced by a large amount, and the morphology is improved by a large degree. Still, Raman spectrum indicates poor crystallinity for the GaAs of the top layer. The effect of different annealing temperatures on the interdiffusion is also studied.


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