TITLE

Miniband dispersion in GaAs/AlxGa1-xAs superlattices with wide wells and very thin barriers

AUTHOR(S)
Peterson, M. W.; Turner, J. A.; Parsons, C. A.; Nozik, A. J.; Arent, D. J.; Van Hoof, C.; Borghs, G.; Houdré, R.; Morkoç, H.
PUB. DATE
December 1988
SOURCE
Applied Physics Letters;12/26/1988, Vol. 53 Issue 26, p2666
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photoreflectance spectra have been used to characterize miniband formation in GaAs/ Alx Ga1-x As superlattices with wide wells (275–255 Å) and withb arriers as thin as 17 Å. Thirty-two optical transitions are resolved in the photoreflectance spectra of the 17 Å barrier sample. These experimental transitions match all those theoretically predicted from the selection rule Δn=0, including Γ- and Π-type transitions arising from miniband dispersion; these results imply sample perfection. A sample with a 40 Å barrier exhibits forbidden transitions with Δn≠0; these additional transitions, together with the narrow width of the minibands for 40 Å barriers, create difficulty in resolving the miniband structure.
ACCESSION #
9829339

 

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