TITLE

Unified planar process for fabricating heterojunction bipolar transistors and buried-heterostructure lasers utilizing impurity-induced disordering

AUTHOR(S)
Thornton, R. L.; Mosby, W. J.; Chung, H. F.
PUB. DATE
December 1988
SOURCE
Applied Physics Letters;12/26/1988, Vol. 53 Issue 26, p2669
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We describe results on a novel geometry of heterojunction bipolar transistor that has been realized by impurity-induced disordering. This structure is fabricated by a method that is compatible with techniques for the fabrication of low threshold current buried-heterostructure lasers. We have demonstrated this compatibility by fabricating a hybrid laser/transistor structure that operates as a laser with a threshold current of 6 mA at room temperature, and as a transistor with a current gain of 5.
ACCESSION #
9829337

 

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