Deposition and imaging of localized charge on insulator surfaces using a force microscope

Stern, J. E.; Terris, B. D.; Mamin, H. J.; Rugar, D.
December 1988
Applied Physics Letters;12/26/1988, Vol. 53 Issue 26, p2717
Academic Journal
A force microscope has been used in a new application to deposit and image localized surface charge on insulators. The lateral resolution for imaging surpasses that of currently available techniques. By applying voltage pulses to an etched nickel microscope tip, micron-sized regions of approximately 2×10-16 C were created on polymethylmethacrylate and single-crystal sapphire surfaces. After depositing the charge, high-contrast images of the charged region were obtained as contours of constant force gradient. The contrast was observed to decay over approximately 1 h, providing evidence for surface charge mobility. The minimum detectable surface charge was estimated to be on the order of 100 electrons.


Related Articles

  • Self-alignment of glass spheres using the electromeniscus phenomenon. Matsuura, Hiroshi; Miyazaki, Manabu; Komatsu, Mamoru; Ogawa, Makoto // Applied Physics Letters;9/26/2005, Vol. 87 Issue 13, p134106 

    This letter reports on the self-alignment of glass spheres using a liquid interacting with an electric field for surface modification. The liquid is electrically attracted and trapped between the glass spheres as a result of the electromeniscus phenomenon. The liquid between the spheres removes...

  • A novel scanning electron microscope method for the investigation of charge trapping in insulators. Gong, H.; Ong, C.K. // Journal of Applied Physics;1/1/1994, Vol. 75 Issue 1, p449 

    A new technique using a copper detector in a scanning electron microscope is introduced for the investigation of charging in insulators, and pure single-crystalline α-quartz samples are studied. The curve of charging rate varying with time is obtained, and the total charge trapped in the...

  • Investigation of the charge distribution in the insulating envelope of a high-voltage vacuum device. Bochkov, V. D.; Pogorel’skiı, M. M. // Technical Physics;Jun99, Vol. 44 Issue 6, p636 

    Methods of measuring charges in the bulk and at the surface of the insulating envelope of a high-voltage vacuum device are developed as part of studies of a complex range of dielectric strength aspects. These methods were used to measure the charge distribution over the length of the envelope...

  • Effect of Electron-electron Interaction on Surface Transport in Three Dimensional Topological Insulators. Pal, Hridis K.; Yudson, Vladimir I.; Maslov, Dmitrii L. // AIP Conference Proceedings;12/28/2011, Vol. 1416 Issue 1, p23 

    We study the effect of electron-electron interaction on the temperature dependence of surface charge transport in three dimensional topological insulators. In conventional two dimensional materials at small temperatures, in the absence of umklapp scattering, the presence or absence of T2...

  • Resistivity, charge diffusion, and charge depth determinations on charged insulator surfaces. Liesegang, J.; Senn, B. C. // Journal of Applied Physics;12/1/1996, Vol. 80 Issue 11, p6336 

    Presents a study which demonstrated the method and theory for the determination of electric charge insulator surfaces. Experimental details; Discussion on the charge decay theory; Behavior of potential and charge distribution of samples.

  • Apparent trap-controlled mobility evaluation in insulating polymers through depolarization characteristics derived by space charge measurements. Mazzanti, G.; Montanan, G. C.; Palmieni, F.; Alison, J. // Journal of Applied Physics;11/1/2003, Vol. 94 Issue 9, p5997 

    This article illustrates a method for the estimation of apparent trap-controlled mobility of charges (i.e., the mobility of charges trapped at different states due to chemical-physical features) in polymeric insulation, based on the results of space charge measurements. The information provided...

  • Biaxial stress dependence of the electrostimulated near-band-gap spectrum of GaN epitaxial film grown on (0001) sapphire substrate. Wan, Keshu; Porporati, Alessandro Alan; Feng, Gan; Yang, Hui; Pezzotti, Giuseppe // Applied Physics Letters;6/19/2006, Vol. 88 Issue 25, p251910 

    The biaxial piezospectroscopic coefficient (i.e., the rate of spectral shift with stress) of the electrostimulated near-band-gap luminescence of gallium nitride (GaN) was determined as Π=-25.8±0.2 meV/GPa. A controlled biaxial stress field was applied on a hexagonal GaN film, epitaxially...

  • Mott-Hubbard transition and Anderson localization: A generalized dynamical mean-field theory approach. Kuchinskii, E. Z.; Nekrasov, I. A.; Sadovskii, M. V. // Journal of Experimental & Theoretical Physics;Mar2008, Vol. 106 Issue 3, p581 

    The DOS, the dynamic (optical) conductivity, and the phase diagram of a strongly correlated and strongly disordered paramagnetic Anderson-Hubbard model are analyzed within the generalized dynamical mean field theory (DMFT + S approximation). Strong correlations are taken into account by the...

  • Interfacial charge modification between SiO2 and silicon. Aronowitz, S.; Zappe, H. P.; Hu, C. // Applied Physics Letters;4/3/1989, Vol. 54 Issue 14, p1317 

    A positive flatband voltage shift, ΔVfb [bar_over_tilde:_approx._equal_to]+0.4 V, with respect to unimplanted portions of the same wafer, was obtained when calcium (1×1013 cm-2) was implanted into 87 nm of thermally grown oxide on an n-type <100> substrate and annealed. Calcium acts as a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics