TITLE

Near-room-temperature operation of Pb1-xSrxSe infrared diode lasers using molecular beam epitaxy growth techniques

AUTHOR(S)
Spanger, Beate; Schiessl, U.; Lambrecht, A.; Böttner, H.; Tacke, M.
PUB. DATE
December 1988
SOURCE
Applied Physics Letters;12/26/1988, Vol. 53 Issue 26, p2582
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Double-Heterostructure lasers have been fabricated with an active layer of PbSe sandwiched between cladding layers of Pb1-x Srx Se. They were operated up to T=290 K (17 °C) in pulsed and T=169 K in cw mode. This is the highest operational temperature in pulsed mode reported for lead salt lasers in the mid-infrared. The emission wavelength tunes with temperature from 8.0 μm (T=20 K) to 4.4 μm (T=285 K).
ACCESSION #
9829275

 

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