Effusion of deuterium from deuterated-fluorinated amorphous silicon under illumination

Weil, R.; Busso, A.; Beyer, W.
December 1988
Applied Physics Letters;12/19/1988, Vol. 53 Issue 25, p2477
Academic Journal
Temperature-dependent deuterium effusion experiments were performed on deuterated-fluorinated amorphous silicon containing 25% D and 0.5% F. Evolution was made in the dark and under up to AM1 illumination. It was found that illumination enhanced effusion. The effect could be explained by an increased D diffusion, caused by enhanced SiD bond breaking resulting from energy supplied by the decay of photocarriers to midgap states.


Related Articles

  • Path integral study of hydrogen and deuterium diffusion in crystalline silicon. Forsythe, Kelsey M.; Makri, Nancy // Journal of Chemical Physics;4/22/1998, Vol. 108 Issue 16, p6819 

    Calculates the diffusion rate of hydrogen and deuterium impurities in crystalline silicon using classical and quantum mechanical methods. Motion effect of hydrogen impurities on crystalline silicon; Contribution of the calculation to the quantum mechanical phenomena; Representation of the...

  • Measurement of the deuterium concentration profile in a deuterium-exchanged LiNbO3 crystal. Rice, C. E.; Jackel, J. L.; Brown, W. L. // Journal of Applied Physics;5/1/1985, Vol. 57 Issue 9, p4437 

    Presents a study that measured the concentration of deuterium as a function of depth in a deuterium-exchanged LiNbO[sub3] sample using nuclear analysis. Relationship between diffusion rate and deuterium concentration; Comparison between the concentration profile and the index profile calculated...

  • On the interpretation of ‘‘ripple’’ polymer interdiffusion experiments in terms of models for bulk single-chain dynamics. Grayce, Christopher J.; Szamel, Grzegorz; Schweizer, Kenneth S. // Journal of Chemical Physics;2/1/1995, Vol. 102 Issue 5, p2222 

    The short-time ripple in the deuterium fraction profile observed during interdiffusion of deuterium-labeled polystyrenes, reported by Russell et al. [Nature (London) 365, 235 (1993)] and Agrawal et al. [Macromolecules 27, 4407 (1994)] has been called ‘‘direct evidence of...

  • Interactions of intentionally diffused hydrogen with nitrogen acceptors and nitrogen related... Pelletier, H.; Tournie, E. // Journal of Applied Physics;8/1/1999, Vol. 86 Issue 3, p1393 

    Focuses on a study on the diffusion profiles of deuterium after exposure of nitrogen doped zinc selenide layers to a plasma. Effect of the diffusion on the electrical and photoluminescence properties of the samples; Experimental procedure; Results and discussion; Summary and conclusion.

  • Diffusion in GaAs of a native defect tagged with deuterium. Morrow, Richard A. // Applied Physics Letters;7/16/1990, Vol. 57 Issue 3, p276 

    We interpret published depth profiles of deuterium in n- and p-type GaAs, following long anneals at 500 °C in a gaseous deuterium atmosphere, as indicating the indiffusion of a native defect (probably VAs) and an impurity (possibly O), both tagged with deuterium. Model fits yield the 500...

  • Effect of local vibrations on the H and D atom densities at a Si surface. Ipatova, I. P.; Chikalova-Luzina, O. P.; Hess, K. // Semiconductors;Sep99, Vol. 33 Issue 9, p1002 

    The equilibrium surface densities of passivating adatoms for a silicon crystal in equilibrium with H[sub 2] or D[sub 2] gas are calculated. The difference in the surface densities of H and D adatoms is determined by the difference in their local surface vibrations. The equilibrium deuterium...

  • Absence of oxygen diffusion during hydrogen passivation of shallow-acceptor impurities in single-crystal silicon. Johnson, N. M.; Moyer, M. D. // Applied Physics Letters;4/15/1985, Vol. 46 Issue 8, p787 

    It was recently proposed that hydrogen compensation of shallow-acceptor impurities in single-crystal silicon is due to the diffusion of both monatomic oxygen and hydrogen into silicon which combine at acceptor sites to form neutral acceptor-OH complexes. It is shown here that oxygen does not...

  • Angular distribution of D2 in thermal desorption from Si(100). Park, Young-Sei; Kim, Jae-Young; Lee, Jihwa // Journal of Chemical Physics;1/1/1993, Vol. 98 Issue 1, p757 

    Presents a study that examined the angular distribution of deuterium during thermal desorption from silicon(100). Methodology; Correlation between angular distribution and desorption angle; Background on dissociative chemisorption.

  • Deuterium effusion measurements in doped crystalline silicon. Stutzmann, Martin; Brandt, Martin S. // Journal of Applied Physics;8/1/1990, Vol. 68 Issue 3, p1406 

    Presents a study which described results for deuterium effusion from undoped and doped crystalline silicon treated in a D[sub2] plasma under different conditions. Measurement of effusion spectra; Characteristics of the form of effusion spectrum for the dopant concentration; Description of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics