TITLE

Effusion of deuterium from deuterated-fluorinated amorphous silicon under illumination

AUTHOR(S)
Weil, R.; Busso, A.; Beyer, W.
PUB. DATE
December 1988
SOURCE
Applied Physics Letters;12/19/1988, Vol. 53 Issue 25, p2477
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Temperature-dependent deuterium effusion experiments were performed on deuterated-fluorinated amorphous silicon containing 25% D and 0.5% F. Evolution was made in the dark and under up to AM1 illumination. It was found that illumination enhanced effusion. The effect could be explained by an increased D diffusion, caused by enhanced SiD bond breaking resulting from energy supplied by the decay of photocarriers to midgap states.
ACCESSION #
9829272

 

Related Articles

  • Path integral study of hydrogen and deuterium diffusion in crystalline silicon. Forsythe, Kelsey M.; Makri, Nancy // Journal of Chemical Physics;4/22/1998, Vol. 108 Issue 16, p6819 

    Calculates the diffusion rate of hydrogen and deuterium impurities in crystalline silicon using classical and quantum mechanical methods. Motion effect of hydrogen impurities on crystalline silicon; Contribution of the calculation to the quantum mechanical phenomena; Representation of the...

  • Measurement of the deuterium concentration profile in a deuterium-exchanged LiNbO3 crystal. Rice, C. E.; Jackel, J. L.; Brown, W. L. // Journal of Applied Physics;5/1/1985, Vol. 57 Issue 9, p4437 

    Presents a study that measured the concentration of deuterium as a function of depth in a deuterium-exchanged LiNbO[sub3] sample using nuclear analysis. Relationship between diffusion rate and deuterium concentration; Comparison between the concentration profile and the index profile calculated...

  • On the interpretation of ‘‘ripple’’ polymer interdiffusion experiments in terms of models for bulk single-chain dynamics. Grayce, Christopher J.; Szamel, Grzegorz; Schweizer, Kenneth S. // Journal of Chemical Physics;2/1/1995, Vol. 102 Issue 5, p2222 

    The short-time ripple in the deuterium fraction profile observed during interdiffusion of deuterium-labeled polystyrenes, reported by Russell et al. [Nature (London) 365, 235 (1993)] and Agrawal et al. [Macromolecules 27, 4407 (1994)] has been called ‘‘direct evidence of...

  • Interactions of intentionally diffused hydrogen with nitrogen acceptors and nitrogen related... Pelletier, H.; Tournie, E. // Journal of Applied Physics;8/1/1999, Vol. 86 Issue 3, p1393 

    Focuses on a study on the diffusion profiles of deuterium after exposure of nitrogen doped zinc selenide layers to a plasma. Effect of the diffusion on the electrical and photoluminescence properties of the samples; Experimental procedure; Results and discussion; Summary and conclusion.

  • Diffusion in GaAs of a native defect tagged with deuterium. Morrow, Richard A. // Applied Physics Letters;7/16/1990, Vol. 57 Issue 3, p276 

    We interpret published depth profiles of deuterium in n- and p-type GaAs, following long anneals at 500 °C in a gaseous deuterium atmosphere, as indicating the indiffusion of a native defect (probably VAs) and an impurity (possibly O), both tagged with deuterium. Model fits yield the 500...

  • Effect of local vibrations on the H and D atom densities at a Si surface. Ipatova, I. P.; Chikalova-Luzina, O. P.; Hess, K. // Semiconductors;Sep99, Vol. 33 Issue 9, p1002 

    The equilibrium surface densities of passivating adatoms for a silicon crystal in equilibrium with H[sub 2] or D[sub 2] gas are calculated. The difference in the surface densities of H and D adatoms is determined by the difference in their local surface vibrations. The equilibrium deuterium...

  • Absence of oxygen diffusion during hydrogen passivation of shallow-acceptor impurities in single-crystal silicon. Johnson, N. M.; Moyer, M. D. // Applied Physics Letters;4/15/1985, Vol. 46 Issue 8, p787 

    It was recently proposed that hydrogen compensation of shallow-acceptor impurities in single-crystal silicon is due to the diffusion of both monatomic oxygen and hydrogen into silicon which combine at acceptor sites to form neutral acceptor-OH complexes. It is shown here that oxygen does not...

  • Angular distribution of D2 in thermal desorption from Si(100). Park, Young-Sei; Kim, Jae-Young; Lee, Jihwa // Journal of Chemical Physics;1/1/1993, Vol. 98 Issue 1, p757 

    Presents a study that examined the angular distribution of deuterium during thermal desorption from silicon(100). Methodology; Correlation between angular distribution and desorption angle; Background on dissociative chemisorption.

  • Deuterium effusion measurements in doped crystalline silicon. Stutzmann, Martin; Brandt, Martin S. // Journal of Applied Physics;8/1/1990, Vol. 68 Issue 3, p1406 

    Presents a study which described results for deuterium effusion from undoped and doped crystalline silicon treated in a D[sub2] plasma under different conditions. Measurement of effusion spectra; Characteristics of the form of effusion spectrum for the dopant concentration; Description of the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics