TITLE

Non-Newtonian strain relaxation in highly strained SiGe heterostructures

AUTHOR(S)
Dodson, Brian W.; Tsao, Jeffrey Y.
PUB. DATE
December 1988
SOURCE
Applied Physics Letters;12/19/1988, Vol. 53 Issue 25, p2498
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Semiconductor strained-layer structures routinely incorporate layer stresses in the GPa regime. At these stresses, models for strain relaxation cannot be based on material parameters determined at small stresses. A new analysis of experimental data on strain relaxation in metastable SiGe/Ge(001) strained-layer structures allows the effects of high stresses on relaxation kinetics to be determined. The activation energy for plastic flow is found to decrease roughly linearly with increasing stress, in a manner analogous to non-Newtonian viscous flow in fluids. As a result, macroscopic relaxation occurs more easily and becomes dramatically more abrupt as the growth temperature is reduced than would be extrapolated from the small-stress behavior. Implications for design and fabrication of metastable strained-layer devices are discussed.
ACCESSION #
9829260

 

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