InP:Yb layers grown by adduct metalorganic vapor phase epitaxy using Yb(MeCp)3

Weber, J.; Molassioti, A.; Moser, M.; Stapor, A.; Scholz, F.; Hörcher, G.; Forchel, A.; Hammel, A.; Laube, G.; Weidlein, J.
December 1988
Applied Physics Letters;12/19/1988, Vol. 53 Issue 25, p2525
Academic Journal
Highly doped InP:Yb layers have been grown by adduct metalorganic vapor phase epitaxy at atmospheric pressure. Yb(MeCp)3, where Me=CH3 and Cp=n5-C5H5, was synthesized as Yb source material because of its relatively high vapor pressure at acceptable source temperatures. The layers were grown in a wide range of growth temperatures (560–670 °C) and Yb mole fractions (10-9–10-7). In photoluminescence experiments they showed strong Yb3+-4f emission. The layers were further characterized by Hall measurements and secondary-ion mass spectroscopy. In order to obtain n-type InP:Yb samples with high carrier concentrations we have grown InP layers double doped with S and Yb.


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