TITLE

Transverse magnetic field dependence of the current-voltage characteristics of double-barrier quantum well tunneling structures

AUTHOR(S)
Ben Amor, S.; Martin, K. P.; Rascol, J. J. L.; Higgins, R. J.; Torabi, A.; Harris, H. M.; Summers, C. J.
PUB. DATE
December 1988
SOURCE
Applied Physics Letters;12/19/1988, Vol. 53 Issue 25, p2540
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the effects of a transverse magnetic field (J⊥B) on the conductivity of quantum well tunneling structures based on AlGaAs/GaAs/AlGaAs quantum wells. The current-voltage characteristics in the positive differential resistance regime show negative magnetoconductance for all values of B. The peak bias voltage increases monotonically with increasing B. For B<6 T there is a decrease in the peak tunneling current, but then it increases for B>6 T. The data also show dramatic magnetic field induced changes in the negative differential resistance (NDR) features. The behavior of the NDR changes from sharp hysteretic bistable-like transitions to astable NDR transitions. Both the valley current and its bias voltage position increase with increasing magnetic field. This behavior is described by a simple model that includes magnetic field effects across the barriers.
ACCESSION #
9829228

 

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