TITLE

High-power GaAs/AlGaAs diode lasers grown on a Si substrate by metalorganic chemical vapor deposition

AUTHOR(S)
Connolly, J.; Dinkel, N.; Menna, R.; Gilbert, D.; Harvey, M.
PUB. DATE
December 1988
SOURCE
Applied Physics Letters;12/19/1988, Vol. 53 Issue 25, p2552
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High-power GaAs/AlGaAs double-heterostructure lasers have been fabricated on Si substrates using a single-step metalorganic chemical vapor deposition process. An output power of 130 mW (per facet) and a slope efficiency of 38% have been obtained under pulsed operation. The peak emission wavelength of the laser was 8823 Å and the beam full width at half power for the parallel and perpendicular far-field radiation patterns were 6° and 41°, respectively.
ACCESSION #
9829221

 

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