High-power GaAs/AlGaAs diode lasers grown on a Si substrate by metalorganic chemical vapor deposition

Connolly, J.; Dinkel, N.; Menna, R.; Gilbert, D.; Harvey, M.
December 1988
Applied Physics Letters;12/19/1988, Vol. 53 Issue 25, p2552
Academic Journal
High-power GaAs/AlGaAs double-heterostructure lasers have been fabricated on Si substrates using a single-step metalorganic chemical vapor deposition process. An output power of 130 mW (per facet) and a slope efficiency of 38% have been obtained under pulsed operation. The peak emission wavelength of the laser was 8823 Å and the beam full width at half power for the parallel and perpendicular far-field radiation patterns were 6° and 41°, respectively.


Related Articles

  • Silicon Ion Irradiation Effects on AlGaN/GaN Heterostructures Grown by Metalorganic Chemical Vapour Deposition. Manavaimaran, Balaji; Krishnan, Baskar // IETE Technical Review;Feb2016, Vol. 33 Issue 1, p50 

    Irradiation effects of 120 MeV silicon ion with the fluence of 5 × 1012ions/cm2at room temperature and low temperature (77 K) on AlGaN/GaN heterostructures have been studied to probe the radiation tolerance for space applications. XRD results explicitly showed there were no compositional...

  • High-power (1.4 W) AlGaInP graded-index separate confinement heterostructure visible (λ∼658 nm) laser. Bour, D. P.; Shealy, J. R. // Applied Physics Letters;11/23/1987, Vol. 51 Issue 21, p1658 

    Pulsed operation of an AlGaInP graded-index separate confinement heterostructure laser grown by organometallic vapor phase epitaxy is reported. The laser active region consists of a single 100 Ã… Ga0.5In0.5P quantum well and 1600 Ã… graded index regions on both sides of the well. The...

  • InGaAsP/InP high-power semi-insulating blocked planar buried-heterostructure lasers grown entirely by atmospheric organometallic vapor phase epitaxy. Miller, B. I.; Koren, U.; Capik, R. J.; Su, Y. K. // Applied Physics Letters;12/28/1987, Vol. 51 Issue 26, p2260 

    High-power semi-insulating blocked planar buried-heterostructure (SIPBH) lasers were grown entirely by atmospheric organometallic vapor phase epitaxy (OMVPE) by using a novel dilution scheme for the trimethylgallium and AsH3. Current thresholds as low as 20 mA and differential quantum...

  • Characteristics of Ga0.51In0.49P/GaAs heterostructures grown on Si substrates by organometallic epitaxy. Horng, R. H.; Wuu, D. S.; Huang, K. C.; Lee, M. K. // Journal of Applied Physics;1/15/1990, Vol. 67 Issue 2, p753 

    Studies the characteristics of gallium compound heterostructures grown on silicon substrates by organometallic epitaxy. Factors that drive the study on the growth of III-V semiconductors on silicon substrates; Details on the experiment; Discussion on the results of the study.

  • Uniformity of an embedded stripe large optical-cavity GaAs/GaAlAs double-heterostructure laser grown by metallo-organic chemical vapor deposition. Fekete, D. // Journal of Applied Physics;2/15/1986, Vol. 59 Issue 4, p1028 

    Presents information on a study which described the uniformity of optical-cavity gallium-arsenic/gallium-aluminum-arsenic double heterostructure stripe geometry laser grown by metallo-organic chemical vapor deposition. Applications of transverse-mode diode lasers; Conclusions.

  • Graded-index separate confinement heterostructure InGaN laser diodes. Stanczyk, S.; Czyszanowski, T.; Kafar, A.; Goss, J.; Grzanka, S.; Grzanka, E.; Czernecki, R.; Bojarska, A.; Targowski, G.; Leszczynski, M.; Suski, T.; Kucharski, R.; Perlin, P. // Applied Physics Letters;Dec2013, Vol. 103 Issue 26, p261107 

    We demonstrate graded-index-separate-confinement-heterostructure InGaN laser diodes (GRINSCH) grown by metal organic vapor phase epitaxy. In this type of structure, the optical mode is confined close to the active region by cladding layers with linearly changing Al content. The virtue of this...

  • Properties of Wide-Mesastripe InGaAsP/InP Lasers. Golikova, E. G.; Kureshov, V. A.; Leshko, A. Yu.; Lyutetskii, A. V.; Pikhtin, N. A.; Ryaboshtan, Yu. A.; Skrynnikov, G. A.; Tarasov, I. S.; Alferov, Zh. I. // Semiconductors;Jul2000, Vol. 34 Issue 7, p853 

    Wide-mesastripe InGaAsP/InP heterostructure lasers emitting at 1.3-1.5 �m were grown by metalorganic chemical vapor deposition (MOCVD). Radiation-power-current and spectral characteristics of the lasers have been studied in pulsed and continuous wave (cw) operation in the temperature range...

  • High power, AlGaAs buried heterostructure lasers with flared waveguides. Welch, D. F.; Cross, P. S.; Scifres, D. R.; Streifer, W.; Burnham, R. D. // Applied Physics Letters;2/2/1987, Vol. 50 Issue 5, p233 

    High power, buried heterostructure laser with flared waveguide horns have been grown by a two-step metalorganic chemical vapor deposition process. Powers up to 120 mW cw in a single longitudinal and transverse mode have been obtained from a single stripe laser. The flared waveguides decrease the...

  • High-power quantum cascade lasers grown by low-pressure metal organic vapor-phase epitaxy operating in continuous wave above 400 K. Diehl, L.; Bour, D.; Corzine, S.; Zhu, J.; Höfler, G.; Loncˇar, M.; Troccoli, M.; Capasso, Federico // Applied Physics Letters;5/15/2006, Vol. 88 Issue 20, p201115 

    High-power quantum cascade lasers (QCLs) working in continuous wave (cw) above 400 K are presented. The material was grown by low-pressure metal organic vapor-phase epitaxy and processed into narrow buried heterostructure lasers. A cw output power of 204 mW was obtained at 300 K with an 8.38...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics