TITLE

Fine structure of EL2 defect absorption in GaAs

AUTHOR(S)
Kuszko, W.; Jeżewski, M.; Baranowski, J. M.; Kaminska, M.
PUB. DATE
December 1988
SOURCE
Applied Physics Letters;12/19/1988, Vol. 53 Issue 25, p2558
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High-resolution measurements of the zero phonon line (ZPL) of the EL2 intracenter absorption were performed. Several samples, both Czochralski and Bridgman grown, have been examined. The shape and position of the ZPL were virtually identical for all the samples. No splitting of the ZPL was detected.
ACCESSION #
9829216

 

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