TITLE

High-power operation in self-sustained pulsating AlGaAs semiconductor lasers with multiquantum well active layer

AUTHOR(S)
Tanaka, T.; Kawano, T.; Kajimura, T.
PUB. DATE
December 1988
SOURCE
Applied Physics Letters;12/19/1988, Vol. 53 Issue 25, p2471
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Self-sustained pulsating optical power and kink level in AlGaAs semiconductor lasers are remarkably improved by introducing a multiquantum well (MQW) structure in the active layer. Stable fundamental transverse mode operation at output power up to 50 mW and self-sustained pulsation at output power up to 40 mW are obtained simultaneously for MQW lasers with antireflective and high-reflective coatings on the facets. Low-noise characteristics (relative intensity noise of less than 10-13 Hz-1 under 3–4% optical feedback) are obtained in the output power range from 7 to 17 mW in MQW lasers with high-reflective coating on the rear facet. These results suggest that low-noise high-power characteristics can be achieved in self-sustained pulsating lasers with a MQW active layer.
ACCESSION #
9829203

 

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