High-power operation in self-sustained pulsating AlGaAs semiconductor lasers with multiquantum well active layer

Tanaka, T.; Kawano, T.; Kajimura, T.
December 1988
Applied Physics Letters;12/19/1988, Vol. 53 Issue 25, p2471
Academic Journal
Self-sustained pulsating optical power and kink level in AlGaAs semiconductor lasers are remarkably improved by introducing a multiquantum well (MQW) structure in the active layer. Stable fundamental transverse mode operation at output power up to 50 mW and self-sustained pulsation at output power up to 40 mW are obtained simultaneously for MQW lasers with antireflective and high-reflective coatings on the facets. Low-noise characteristics (relative intensity noise of less than 10-13 Hz-1 under 3–4% optical feedback) are obtained in the output power range from 7 to 17 mW in MQW lasers with high-reflective coating on the rear facet. These results suggest that low-noise high-power characteristics can be achieved in self-sustained pulsating lasers with a MQW active layer.


Related Articles

  • InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiency. Choi, H. K.; Wang, C. A. // Applied Physics Letters;7/23/1990, Vol. 57 Issue 4, p321 

    Graded-index separate-confinement heterostructure InGaAs/AlGaAs single quantum well diode lasers emitting at 1.02 μm have been fabricated from structures grown by organometallic vapor phase epitaxy. Under pulsed operation, threshold current densities as low as 65 A/cm2, the lowest reported...

  • Linewidth enhancement factor in 1.3 μm GaAsSb type-II quantum-well lasers. Schlichenmaier, C.; Koch, S. W.; Chow, W. W. // Applied Physics Letters;10/14/2002, Vol. 81 Issue 16, p2944 

    The antiguiding or linewidth enhancement factor α is computed microscopically for a series of type-II GaAsSb/GaInAs/GaAs quantum-well structures. The results predict α values below unity at peak gain suggesting highly stable laser operation with excellent linewidth properties.

  • Intersubband absorption in strained InxGa1-xAs/Al0.4Ga0.6As (0≤x≤0.15) multiquantum wells. Zhou, X.; Bhattacharya, P. K.; Hugo, G.; Hong, S. C.; Gulari, E. // Applied Physics Letters;2/27/1989, Vol. 54 Issue 9, p855 

    We report, for the first time, temperature-dependent intersubband absorption data in doped pseudomorphic InxGa1-xAs/Al0.4Ga0.6As (0≤x≤0.15) multiquantum wells. In this composition range the absorption resonance varies in the range 6–7 μm for 50 Å wells, which agrees...

  • Electrostatic Model of Band-Gap Renormalization and the Photoluminescence Line Shape in a GaAs/AlGaAs Two-Dimensional Layer at a High Excitation Level. Poklonski, N. A.; Siaglo, A. I. // Physics of the Solid State;Jan2001, Vol. 43 Issue 1, p157 

    An electrostatic model for calculating the band-gap renormalization in a two-dimensional (2D) semiconductor layer (quantum well) due to the Coulomb interaction between nonequilibrium charge carriers has been proposed. Consideration is given only to the first quantum-well energy levels for...

  • GaSb/GaInSb quantum wells grown by metalorganic vapor phase epitaxy. Haywood, S. K.; Chidley, E. T. R.; Mallard, R. E.; Mason, N. J.; Nicholas, R. J.; Walker, P. J.; Warburton, R. J. // Applied Physics Letters;3/6/1989, Vol. 54 Issue 10, p922 

    Single and multiple quantum wells of GaSb/GaInSb were grown by metalorganic vapor phase epitaxy. X-ray diffraction on an 80 Å single well confirmed the Ga1-xInxSb composition to be x=0.15, for which the lattice mismatch is ≊1.0%. Photoluminescence and photoconductivity from this sample...

  • Optically pumped mode-locked multiple quantum well laser. Valk, B.; Salour, M. M.; Munns, G.; Morkoç, H. // Applied Physics Letters;9/8/1986, Vol. 49 Issue 10, p549 

    We report the first optically pumped mode-locked Al0.3Ga0.7As/GaAs multiple quantum well (MQW) laser in external cavity. The MQW structure with a total thickness of 5 μm was grown by molecular beam epitaxy on a Si-doped GaAs substrate and was synchronously pumped by a mode-locked Kr+ laser...

  • Ultimate limit in low threshold quantum well GaAlAs semiconductor lasers. Lau, K. Y.; Derry, P. L.; Yariv, A. // Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p88 

    Gain measurements were performed on buried heterostructure single quantum well lasers to ascertain the transparency current density, which represents a basic limit in the threshold current. By using the optimal design approach, a lowest threshold of 0.55 mA in a 120-μm-long device was...

  • Full-aperture, high-power semiconductor laser. Waters, R. G.; Dalby, R. J.; Emanuel, M. A. // Applied Physics Letters;6/19/1989, Vol. 54 Issue 25, p2534 

    A single quantum well laser with a 2-mm-wide aperture has exhibited low threshold current density and nearly 100% packing fraction. The lateral structure relies on epitaxial growth on a corrugated substrate to frustrate radiative lateral processes and it thus eliminates the need for isolation at...

  • Anomalous Dispersion, Differential Gain, and Dispersion of the a-Factor in InGaAs/AlGaAs/GaAs Strained Quantum-Well Semiconductor Lasers. Bogatov, A. P.; Boltaseva, A. E.; Drakin, A. E.; Belkin, M. A.; Konyaev, V. P. // Semiconductors;Oct2000, Vol. 34 Issue 10, p1207 

    A new procedure for the experimental determination of the differential gain and dispersion of the amplitude-phase coupling coefficient in semiconductor injection lasers was proposed and implemented. The a-factor and differential gain for InGaAs/AlGaAs/GaAs single quantum well (QW) semiconductor...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics