TITLE

Continuous, high-power operation of a strained InGaAs/AlGaAs quantum well laser

AUTHOR(S)
Bour, D. P.; Gilbert, D. B.; Elbaum, L.; Harvey, M. G.
PUB. DATE
December 1988
SOURCE
Applied Physics Letters;12/12/1988, Vol. 53 Issue 24, p2371
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Continuous wave (cw), high-power operation of a strained In0.2Ga0.8As/ AlGaAs quantum well laser, grown by atmospheric pressure organometallic vapor phase epitaxy, is reported. The laser active region consists of a single 70 Å In0.2Ga0.8As/Al0.2Ga0.8As quantum well, with optical confinement provided by a graded index separate confinement heterostructure. The threshold current density and differential quantum efficiency of a 90 μm×600 μm stripe with uncoated facets are ∼200 A/cm2 and 46%, respectively. Lasing wavelength is ∼930 nm, and the cw single ended power versus current characteristic is linear up to 250 mW (1 A current). In the short-cavity (<300 μm) regime, these devices have high thresholds and have been observed to lase at shorter wavelength, presumably due to a saturation of gain at the lowest energy transition. The characteristic temperature is 150 K and decreases somewhat with cavity length. This suggests that some nonradiative process, most likely Auger recombination, contributes significantly to quantum well gain saturation.
ACCESSION #
9829186

 

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