Far-infrared absorption by oxygen in silicon

Yamada-Kaneta, Hiroshi; Ogawa, Tsutomu; Muraishi, Shuichi; Kaneta, Chioko; Wada, Kunihiko
December 1988
Applied Physics Letters;12/12/1988, Vol. 53 Issue 24, p2391
Academic Journal
Far-infrared absorption measurements in the 14–50 cm-1 range have been performed for oxygen containing silicon crystals in a temperature range of 4.2–35 K. In addition to the previously reported absorption peaks at 29.3, 37.8, 43.3, and 49.0 cm-1 [D. R. Bosomworth, W. Hayes, A. R. L. Spray, and G. D. Watkins, Proc. R. Soc. London A 317, 133 (1970)], a fine structure with peaks at 25.3, 28.3, 30.2, and 33.3 cm-1 has been found, which is considered to be a sideband caused by a coupling between the off-center excitation of the interstitial oxygen and other anharmonic localized excitation of an energy of about 1 cm-1 hc.


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