Raman spectroscopy of InSb/CdTe heterostructures: Improved interface quality obtained by Cd overpressure during molecular beam epitaxial growth

Zahn, D. R. T.; Williams, R. H.; Golding, T. D.; Dinan, J. H.; Mackey, K. J.; Geurts, J.; Richter, W.
December 1988
Applied Physics Letters;12/12/1988, Vol. 53 Issue 24, p2409
Academic Journal
In recent photoemission and Raman experiments interfacial layers of indium telluride together with liberated antimony were found to be formed during the molecular beam epitaxial growth of CdTe on InSb(100) at elevated substrate temperatures (TS≥200 °C). We have previously suggested that the application of a sufficiently large Cd overpressure during growth is likely to suppress the formation of interfacial layers and enable successful epitaxial growth of CdTe. In this letter we present Raman spectra revealing that a flux ratio of Cd/Te=3 during growth effectively suppresses indium telluride formation leading to largely improved InSb/CdTe interfaces.


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