TITLE

Infrared absorption of electron irradiation induced deep defects in semi-insulating GaAs

AUTHOR(S)
Manasreh, M. O.; Fischer, D. W.
PUB. DATE
December 1988
SOURCE
Applied Physics Letters;12/12/1988, Vol. 53 Issue 24, p2429
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electron irradiation induced defects in semi-insulating GaAs grown by the liquid-encapsulated Czochralski technique were studied using infrared absorption spectroscopy. A broad peak (P1) and a shoulder (P2) were observed in the infrared absorption spectra of the irradiated materials at 0.98 and 0.78 eV, respectively. The electron-phonon coupling strength as well as the Franck–Condon shift of P1 was estimated from the temperature dependence of the linewidth. The annealing kinetics between 375 and 450 °C show that the P1 defect vanishes by a long-range migration process with an enthalpy of 0.78±0.02 eV. A speculation for the atomic structure of P1 is presented.
ACCESSION #
9829140

 

Related Articles

  • On the Properties of a Radiation-Induced Defect Responsible for the 1.0-eV IR Absorption Band in Gallium Arsenide. Dzhibuti, Z. V.; Dolidze, N. D. // Technical Physics Letters;Dec2001, Vol. 27 Issue 12, p1008 

    The IR absorption spectra were measured at 77 K for Te-doped n-GaAs samples irradiated by electrons with an energy of E = 3 MeV. It was found that the samples exhibit two absorption bands in the IR range, corresponding to 1.0 and 0.8 eV.

  • Pair of local vibration mode absorption bands related to EL2 defects in semi-insulating GaAs. Song, Chunying; Ge, Weikun; Jiang, Desheng; Hsu, Chenchia // Applied Physics Letters;6/8/1987, Vol. 50 Issue 23, p1666 

    A pair of correlated bands, which show the same fine structure at low temperature, is discovered in infrared absorption spectra of semi-insulating GaAs crystals. At 80 K the bands peak at 730 cm-1 and 714 cm-1, respectively. According to the fine structures, the spectral linewidths, and the...

  • Two-photon spectroscopy of GaAs. Seiler, D. G.; Littler, C. L.; Heiman, D. // Journal of Applied Physics;3/15/1985, Vol. 57 Issue 6, p2191 

    Presents a study which obtained two-photon absorption spectra of gallium arsenide (GaAs) through photoconductivity techniques. Summary of previous works on GaAs two-photon; Schematic diagram of the two-photon spectroscopy setup; Discussion on theoretical two-photon transitions.

  • Determination of the density of states effective mass and the energy minimum of the X7 satellite conduction band in GaAs from the X6→X7 absorption spectrum. Wang, W. B.; Ockman, N.; Cavicchia, M. A.; Alfano, R. R. // Applied Physics Letters;7/23/1990, Vol. 57 Issue 4, p395 

    A time-resolved picosecond pump-infrared-probe technique was used to measure the X6→X7 absorption spectrum in an intrinsic GaAs crystal. From the long-wavelength onset of the induced X6→X7 absorption spectrum, the energy gap between the minima of the X6 and X7 bands was directly...

  • X–Γ indirect intersubband transitions in type II GaAs/AlAs superlattices. Fenigstein, A.; Finkman, E.; Bahir, G.; Schacham, S. E. // Applied Physics Letters;9/16/1996, Vol. 69 Issue 12, p1758 

    Intersubband transitions indirect in both real and momentum spaces were observed in GaAs/AlAs type II short period superlattices. Significant absorption of normal incident radiation, with ‘‘forbidden’’ polarization was measured, in addition to absorption in the...

  • Scanning tunneling spectroscopy of n-type GaAs under laser irradiation. Takahashi, Takuji; Yoshita, Masahiro // Applied Physics Letters;4/21/1997, Vol. 70 Issue 16, p2162 

    Examines the scanning tunneling spectroscopy of n-type gallium arsenide under laser irradiation. Observation of the negative surface photovoltage effects due to the laser irradiation; Dependency of photosensitivities on the doping densities; Sensitivity of the lower doped samples.

  • Evaluation of the quality of GaAs epitaxial layers and their interfaces from analysis of the exciton absorption spectra. Grigorieva, N.; Egorov, A.; Zaitsev, D.; Nikitina, E.; Seisyan, R. // Semiconductors;Jun2014, Vol. 48 Issue 6, p754 

    Exciton optical spectra are sensitive to even slight changes in the properties of a solid. The spectra of exciton polaritons can be especially informative, although the spectroscopy of these quasiparticles imposes certain restrictions on the measurement temperature and the quality of the...

  • Enhancement of intensity-dependent absorption in InP and GaAs at 1.9 μm by doping. Li, Nien-Lou; Bass, Michael; Swimm, Randall // Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p964 

    Dopants giving rise to deep level states in InP and GaAs were found to significantly enhance the process of intensity-dependent absorption at 1.9 μm. Such dopants also beneficially alter the laser damage threshold of the host materials.

  • Infrared intersubband absorption in GaAs/AlAs multiple quantum wells. Covington, B. C.; Lee, C. C.; Hu, B. H.; Taylor, H. F.; Streit, D. C. // Applied Physics Letters;5/22/1989, Vol. 54 Issue 21, p2145 

    Optical absorption spectra have been measured from 6 to 296 K for a GaAs/AlAs multiple quantum well sample which shows a strong peak at 11.1 μm at room temperature. These and previously published results are compared with predictions of an effective mass model which takes into account...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics