TITLE

Quantitative defect etching of GaAs on Si: Is it possible?

AUTHOR(S)
Stirland, D. J.
PUB. DATE
December 1988
SOURCE
Applied Physics Letters;12/12/1988, Vol. 53 Issue 24, p2432
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The Wright etch [M. W. Jenkins, J. Electrochem. Soc. 124, 757 (1977)], hitherto used to reveal defects in silicon, has been examined as a defect etchant for GaAs epitaxial layers on silicon. Various calibration techniques, including transmission electron microscopy of etched epitaxial layers, have been used to establish that etch features correspond with dislocations. Problems involved in direct comparisons of defect densities measured by different methods are discussed.
ACCESSION #
9829139

 

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