Quantitative defect etching of GaAs on Si: Is it possible?

Stirland, D. J.
December 1988
Applied Physics Letters;12/12/1988, Vol. 53 Issue 24, p2432
Academic Journal
The Wright etch [M. W. Jenkins, J. Electrochem. Soc. 124, 757 (1977)], hitherto used to reveal defects in silicon, has been examined as a defect etchant for GaAs epitaxial layers on silicon. Various calibration techniques, including transmission electron microscopy of etched epitaxial layers, have been used to establish that etch features correspond with dislocations. Problems involved in direct comparisons of defect densities measured by different methods are discussed.


Related Articles

  • Dislocation generation of GaAs on Si in the cooling stage. Tachikawa, Masami; Mori, Hidefumi // Applied Physics Letters;5/28/1990, Vol. 56 Issue 22, p2225 

    In situ measurements are carried out for the etch pit density (EPD) of GaAs on Si at growth temperature using a newly developed HCl-GaCL vapor phase etching method. The EPD obtained is 4×104 cm-2 at growth temperature. However, after the temperature cools down to room temperature, the EPD is...

  • Exponential growth of periodic surface ripples generated in laser-induced etching of GaAs. Kumagai, H.; Toyoda, K.; Machida, H.; Tanaka, S. // Applied Physics Letters;12/2/1991, Vol. 59 Issue 23, p2974 

    Demonstrates the exponential growth of periodic surface ripples in laser-induced etching of gallium arsenide. Increase of the etched depth of the ripple structure with the rise of the laser irradiation time; Obtainment of a small-signal gain.

  • The effect of surface reconstructions on the surface morphology during in situ etching of GaAs. Ritz, M.; Kaneko, T. // Applied Physics Letters;8/4/1997, Vol. 71 Issue 5, p695 

    Examines the influence of surface reconstruction on the morphology during in situ etching of gallium arsenide (001) semiconductors. Utilization of reflection high-energy electron-diffraction in evaluating surface reconstructions; Use of arsenic bromide as reactive source etchant;...

  • GaAs pattern etching with little damage by a combination of Ga+focused-ion-beam irradiation and subsequent Cl2 gas etching. Sugimoto, Y.; Taneya, M.; Akita, K.; Hidaka, H. // Journal of Applied Physics;12/15/1990, Vol. 68 Issue 12, p6415 

    Studies gallium arsenide pattern etching with little damage by a combination of gallium focused-ion-beam (FIB) irradiation and subsequent chloride gas etching. Application of FIB in semiconductor microstructures; Details on the experiment; Discussion on the results of the study.

  • Contour photoetching of n-type semiconductors. van de Ven, J.; Nabben, H.J.P. // Applied Physics Letters;2/25/1991, Vol. 58 Issue 8, p831 

    Focuses on contour photoetching of n-type gallium arsenide (GaAs) semiconductor in H[sub 2]O[sub 2]/H[sub 2]SO[sub 4] solutions. Kinetics in photoetching of semiconductors with a projected beam on a large surface; Structures obtained after prolonged etching; Maskless method.

  • Effect of carrier confinement on the laser-induced etching of GaAs/AlGaAs heterostructures. Ruberto, M. N.; Willner, A. E.; Podlesnik, D. V.; Osgood, R. M. // Applied Physics Letters;9/4/1989, Vol. 55 Issue 10, p984 

    Laser-induced photochemical etching was used to etch GaAs/AlGaAs multilayered material. In this carrier-driven process, the confinement of photogenerated holes to the alternating GaAs layers resulted in the controlled lateral etching of buried GaAs layers. An application of this etching...

  • Enhanced diffusion of Si due to He ion implantation in Si-delta doped GaAs layers. Tell, B.; Brown Goebeler, K. F.; Cunningham, J. E.; Chiu, T. H.; Jan, W. Y. // Applied Physics Letters;6/25/1990, Vol. 56 Issue 26, p2657 

    Enhanced diffusion of Si due to He ion implantation in Si-delta doped GaAs layers has been observed by the capacitance-voltage technique. After an 800 °C anneal, an increase as large as an order of magnitude in the diffusion coefficient compared to thermal diffusion was observed. We also...

  • Dependence of the conduction in In0.53Ga0.47As-InP double-barrier tunneling structures on the mesa-etching process. Vuong, T. H. H.; Tsui, D. C.; Tsang, W. T. // Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p1004 

    Measurements of the current-voltage curves of several In0.53Ga0.47As-InP double-barrier tunneling structures are presented as a function of the etching process used. It is shown that the large nontunneling leakage current previously observed in devices etched with the HBr:H3PO4:K2Cr2O7 solution...

  • Ion beam etching of GaAs: Influence of etching parameters on the degree of radiation damage. Borzenko, T.B.; Koval, Y.I.; Kulik, L.V.; Larionov, A.V. // Applied Physics Letters;4/28/1997, Vol. 70 Issue 17, p2297 

    Examines the possibility of decreasing the radiation damage of gallium arsenide semiconductor during ion beam etching. Influence of channeling and diffusion on deep defect propagation; Determination of the etching rate; Suppression of radiation stimulated diffusion at low temperatures.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics