Growth and characterization of GaAs layers on Si substrates by migration-enhanced molecular beam epitaxy

Kim, Jae-Hoon; Liu, John K.; Radhakrishnan, Gouri; Katz, Joseph; Sakai, Shiro; Chang, Shi S.; El-Masry, Nadia A.
December 1988
Applied Physics Letters;12/12/1988, Vol. 53 Issue 24, p2435
Academic Journal
We first report on migration-enhanced molecular beam epitaxial (MEMBE) growth and characterization of the GaAs layer on Si substrates (GaAs/Si). Excellent surface morphology GaAs layers were successfully grown on (100)Si substrates misoriented 4° toward the [110] direction. The MEMBE growth method is described, and material properties are compared with those of normal two-step MBE-grown or in situ annealed layers. Micrographs of cross-section view transmission electron microscopy (TEM) and scanning surface electron microscopy (SEM) of MEMBE-grown GaAs/Si showed dislocation densities of 1×107 cm-2, over ten times lower than those of normal two-step MBE-grown or in situ annealed layers. AlGaAs/GaAs double heterostructures have been successfully grown on MEMBE GaAs/Si by both metalorganic chemical vapor deposition and liquid phase epitaxy.


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