TITLE

Strain dependence of p-i-n hydrogenated amorphous silicon junctions

AUTHOR(S)
Utsunomiya, Michito; Yoshida, Akira
PUB. DATE
December 1988
SOURCE
Applied Physics Letters;12/5/1988, Vol. 53 Issue 23, p2296
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effects of mechanical strain on the electrical properties of p-i-n hydrogenated amorphous silicon junction devices were investigated. When strain was applied parallel to the junction plane, both the forward and reverse currents increased with increasing compressive strain and decreased with increasing tensile strain. The ratio for change in current was 8% under the strain of 7.5×10-4, and the strain sensitivity was as large as that in the piezoresistance effect of crystalline silicon. The strain dependence is due to a change in carrier concentration induced by a displacement of energy band and a change in carrier lifetime.
ACCESSION #
9829078

 

Related Articles

  • Localization of the Si-H stretch vibration in amorphous silicon. Rella, C.W.; van der Voort, M.; Akimov, A.V.; van der Meer, A.F.G.; Dijkhuis, J.I. // Applied Physics Letters;11/8/1999, Vol. 75 Issue 19, p2945 

    Focuses on the transient transmission and transient grating lifetime measurements performed on the Si-H stretch mode as a function of temperature and wavelength using intense infrared pulses from a free electron laser. Microscopic structure and dynamics in the vicinity of the Si-H bond; Highly...

  • 'Fast' and 'slow' metastable defects in hydrogenated amorphous silicon.  // Applied Physics Letters;7/19/1993, Vol. 63 Issue 3, p400 

    Examines the metastable defect in hydrogenated amorphous silicon. Analysis on the two-step light soaking experiment at high and low intensities; Establishment of a rate equation system for all defect components; Use of rate equation system to describe the defect kinetics.

  • Difference in light-induced annealing behavior of deposition- and light-induced defects in.... Hata, N.; Matsuda, A. // Applied Physics Letters;10/4/1993, Vol. 63 Issue 14, p1948 

    Examines the light-induced annealing (LIA) of deposition-induced defects in hydrogenated amorphous silicon. Description of LIA; Efficacy of the light-induced defects; Effects of thermal annealing.

  • Anomalous substrate and annealing temperature dependencies of heavily boron-doped hydrogenated amorphous silicon. Jang, Jin; Kim, Sung Chul // Journal of Applied Physics;3/1/1987, Vol. 61 Issue 5, p2092 

    Presents information on a study which measured the substrate and annealing temperature dependencies of optical gap, hydrogen concentration, inverse slope of Urbach edge, dark conductivity and photoconductivity for one percent boron-doped hydrogenated amorphous silicon (a-Si:H). Anomalous...

  • Anomalous deposition rate dependence of hydrogenated amorphous silicon on substrate temperature. Ishihara, Shin-ichiro; Kitagawa, Masatoshi; Hirao, Takashi // Journal of Applied Physics;10/1/1987, Vol. 62 Issue 7, p3060 

    Presents a study that investigated the deposition rate dependence of hydrogenated amorphous silicon prepared by capacitively coupled radio frequency glow discharge upon substrate temperature. Background on the required substrate temperature for high-quality hydrogenated amorphous silicon;...

  • Saturation behavior of the defect density in hydrogenated amorphous silicon by continuous and.... Jong-Hwan Yoon; Kim, H.L. // Applied Physics Letters;5/29/1995, Vol. 66 Issue 22, p3021 

    Evaluates the measurements of saturated defect density in hydrogenated amorphous silicon (a-Si:H) using continuous and pulsed light illumination. Difference between pulsed and continuous wave light-induced saturation values of defect density; Creation of defects by light illumination; Details...

  • The influence of hydrogen on a hyperfine field of the amorphous alloy Fe83.3B11.2Si3.5C2 (abstract). Gui, RongLi; Chen, WenZhi; Llo, KaiYuan // Journal of Applied Physics;11/15/1988, Vol. 64 Issue 10, p5509 

    Presents an abstract of the article 'The Influence of Hydrogen on a Hyperfine Field of the Amorphous Alloy Fe[sub83.3]B[sub11.2]Si[sub3.5]C[sub2],' by Rongli Gui, WenZhi Chen and KaiYuan Llo.

  • Mechanical properties of a-C:H films prepared by plasma decomposition of C2H2. Jiang, X.; Reichelt, K.; Stritzker, B. // Journal of Applied Physics;8/1/1990, Vol. 68 Issue 3, p1018 

    Presents a study which deposited diamondlike hydrogenated amorphous carbon (a-C:H) films by decomposition of C[sub2]H[sub2]. Properties of amorphous carbon films; Details of the experiments on a-C:H films.

  • Graphitic network models of ‘‘diamondlike’’ carbon. Tamor, M. A.; Wu, C. H. // Journal of Applied Physics;1/15/1990, Vol. 67 Issue 2, p1007 

    Presents a study that presents structural models of both hydrogenated and unhydrogenated amorphous diamondlike carbon which reproduce important properties of those materials. Limitations of the defected graphite model; Analysis of hydrogenated carbon; Density of amorphous carbon films as a...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics