TITLE

Zn diffusion enhancement of interdiffusion in a GaAs-InGaPAs heterostructure

AUTHOR(S)
Park, H.-H.; Lee, K. H.; Stevenson, D. A.
PUB. DATE
December 1988
SOURCE
Applied Physics Letters;12/5/1988, Vol. 53 Issue 23, p2299
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The influence of concurrent Zn diffusion on the interdiffusion in an In0.06Ga0.94P0.05As0.95-GaAs heterostructure grown by liquid phase epitaxy was investigated. A 25 h, 700 °C diffusion anneal was performed using an equilibrium ternary diffusion source and profiles of In and P were measured with secondary-ion mass spectrometry. The Zn diffusion selectively enhances the cation (In-Ga) interdiffusion; with concurrent Zn diffusion, the interdiffusion coefficient for the In-Ga components is ≊5×10-14 cm2/s, as compared to ≊6×10-16 cm2/s for anions (As-P). A kick-out mechanism is proposed to explain the results.
ACCESSION #
9829076

 

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