TITLE

Spiral hollow cathode plasma-assisted diamond deposition

AUTHOR(S)
Tzeng, Y.; Kung, P. J.; Zee, R.; Legg, K.; Solnick-Legg, H.; Burns, D.; Loo, B. H.
PUB. DATE
December 1988
SOURCE
Applied Physics Letters;12/5/1988, Vol. 53 Issue 23, p2326
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High quality diamond films have been deposited on silicon and sapphire by means of a combined hot filament/electron beam/plasma-assisted chemical vapor deposition technique. A spiral tantalum foil is used as the hot cathode to generate a high-current dc discharge at a low sustaining voltage. Gas mixtures consisting of methane, hydrogen, and argon flowing through the spiral cathode towards the anode are effectively decomposed by the hot cathode and the high-density plasma. Diamond particles and films, grown at a rate between 0.5 and 5 μm/h, have been characterized by scanning electron microscopy, x-ray diffraction, and Raman spectroscopy.
ACCESSION #
9829059

 

Related Articles

  • Transient response of planar integrated optoelectronic antennas. DeFonzo, Alfred P.; Jarwala, Madhuri; Lutz, Charles // Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1155 

    Broadband tapered slot antennas monolithically integrated on ion damaged silicon-on-sapphire substrates are driven by picosecond photoconductivity to generate and detect millimeter waves. The time-dependent electromagnetic impulse response of these transceivers is modeled by relating the antenna...

  • Conversion of silicon carbide to crystalline diamond-structured carbon at ambient pressure. Gogotsi, Yury; Welz, Sascha; Ersoy, Daniel A.; McNallan, Michael J. // Nature;5/17/2001, Vol. 411 Issue 6835, p283 

    Presents a study which reported the synthesis of nano- and micro-crystalline diamond-structured carbon, with cubic and hexagonal structure, by extracting silicon from silicon carbide in chlorine-containing gases at ambient pressure. Application of the transmission electron microscopy in layers...

  • Jewelry.  // JCK;Jun2002, Vol. 173 Issue 6, p200 

    Presents pictures depicting designs of several jewelries. Color and arrangement of the sapphires used in the necklace; Cost of the pendant; Diamonds used in the seven-row bracelet.

  • Gems.  // Monkeyshines on Rocks & Minerals;2001, p100 

    Provides facts on several gemstones. Rarity and durability of diamonds, sapphires, emeralds and rubies; Name of the largest ruby; Description of geodes.

  • Electronegativity and doping in semiconductors. Schwingenschlögl, U.; Chroneos, A.; Schuster, C.; Grimes, R. W. // Journal of Applied Physics;Aug2012, Vol. 112 Issue 4, p046101 

    Charge transfer predicted by standard models is at odds with Pauling's electronegativities but can be reconciled by the introduction of a cluster formation model [Schwingenschlögl et al., Appl. Phys. Lett. 96, 242107 (2010)]. Using electronic structure calculations, we investigate p- and...

  • Materials science: The road to diamond wafers. Lee, S. T.; Lifshitz, Y. // Nature;7/31/2003, Vol. 424 Issue 6948, p500 

    Diamond could rival silicon as the material of choice for the electronics industry, but has been held back by the difficulty of growing large enough wafers. Diamond can be grown on diamond by chemical vapour deposition: a diamond substrate, at a temperature of 600-800 degree C, is exposed to an...

  • Double solid phase epitaxy of germanium-implanted silicon on sapphire. Peterstrom, S. // Applied Physics Letters;6/24/1991, Vol. 58 Issue 25, p2927 

    Reports that the crystalline quality of silicon on sapphire structures has been improved by double solid phase epitaxy of germanium-implanted material. Increase in mobility by the regrowth technique in phosphorus- and boron-doped films; Measurement of depth distribution of germanium induced donors.

  • Influence of implantation induced damage in sapphire upon improvement of crystalline quality of silicon on sapphire. Yamamoto, Y.; Kobayashi, H.; Takahashi, T.; Inada, T. // Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1315 

    Crystalline quality improvement of silicon on sapphire (SOS) was carried out using thermal regrowth following Si implantation at energies of 130 and 150 keV, where the projected range of Si corresponded to and exceeded the SOS film thickness, respectively. Under the latter implant condition, it...

  • Low-temperature heteroepitaxial film growth of Si on sapphire by reactive ion beam deposition. Yamada, Hiroshi; Torii, Yashuhiro // Journal of Applied Physics;9/15/1987, Vol. 62 Issue 6, p2298 

    Presents a study which investigated heteroepitaxial film growth of silicon on sapphire using ionized species. Importance of low-temperature film formation techniques for the precise fabrication of highly integrated very large integration and heterostructure devices; Relationship between growth...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics