Technique for selective etching of Si with respect to Ge

Bright, A. A.; Iyer, S. S.; Robey, S. W.; Delage, S. L.
December 1988
Applied Physics Letters;12/5/1988, Vol. 53 Issue 23, p2328
Academic Journal
A technique to selectively etch silicon with respect to germanium is described. The method relies on an observed small difference in the effects of polymeric etch-inhibiting layers on the two materials. In a CF4/H2 plasma, the observed polymer point for Ge is 1–3% lower than for Si. This produces a narrow process window in which Si is etched while etching of Ge is suppressed. This technique has applications to etching of pure Si layers over Ge as well as Si-Ge alloys for device applications.


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