Resonant tunneling in AlSb/InAs/AlSb double-barrier heterostructures

Luo, L. F.; Beresford, R.; Wang, W. I.
December 1988
Applied Physics Letters;12/5/1988, Vol. 53 Issue 23, p2320
Academic Journal
We report the first observations of resonant tunneling in the AlSb/InAs material system, with a maximum peak-to-valley current ratio of 1.8:1 at room temperature and 9:1 at 77 K. The large AlSb/InAs barrier height of 1.8 eV for electrons and high-mobility InAs will be advantageous in device applications. In particular, the small electron effective mass in InAs makes it possible to demonstrate quantum effects in a 24 nm well, the longest coherence distance reported for double-barrier tunneling structures. We estimate that an AlSb/InAs resonant tunneling transistor can significantly outperform similar devices based on AlGaAs/GaAs.


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