Kinetic model for gradual degradation in semiconductor lasers and light-emitting diodes

Khait, Yu. L.; Salzman, J.; Beserman, R.
November 1988
Applied Physics Letters;11/28/1988, Vol. 53 Issue 22, p2135
Academic Journal
A new semiphenomenological statistical kinetic model for gradual degradation in semiconductor laser and light-emitting diodes is presented. In this model, the injection of a nonequilibrium electron-hole plasma increases the probability of structural changes and reduces their effective activation energy. Arrhenius-like expressions for the degradation rate with the pre-exponential factor and the effective activation energy as explicit functions of the material parameters are derived. Good agreement with experimental data is obtained.


Related Articles

  • Kinetics of pressure-dependent gradual degradation of semiconductor lasers and light-emitting diodes. Khait, Yu. L.; Salzman, J.; Beserman, R. // Applied Physics Letters;9/18/1989, Vol. 55 Issue 12, p1170 

    A statistical kinetic model for gradual degradation of semiconductor lasers and light-emitting diodes under the influence of pressure is presented. Within the framework of this model, the rate coefficient for disordering atom jumps, K, and the operating lifetime of the device, Ï„, are...

  • Lighting with laser diodes. Fitzgerald, Richard J. // Physics Today;Sep2013, Vol. 66 Issue 9, p18 

    The article discusses research of Kristin Denault, Michael Cantore, and colleagues at the University of California, Santa Barbara (UCSB) indicating that laser diodes are developing as an attractive alternative to light-emitting diodes (LEDs).

  • Ultra bright surface emission from a distributed Bragg reflector hot electron light emitter. O'Brien, A.; Balkan, N. // Applied Physics Letters;1/20/1997, Vol. 70 Issue 3, p366 

    Demonstrates the ultrabright stimulated emission from hot electron light emitting and laser semiconductor heterostructure (HELLISH-1) device. Comparison between the operation of HELLISH-1 and ultrabright HELLISH-1 (UB-HELLISH-1); Detection of super radiant emission with an improved full width;...

  • Blue lasers, LEDs promise to double CD-ROM capacity. Baker, Andrea // Design News;10/23/95, Vol. 51 Issue 20, p11 

    Focuses on the incorporation of semiconductor lasers and light emitting diodes (LEDs) in developing a new type of CD-ROM. Companies engaged in CD-ROM development; Comparison with red laser-based CD-ROM storage capacity; Areas of high-technology benefiting from the new CD-ROM features.

  • LASER DIODES, KILLER APPS, GRAPHENE AND SO MUCH MORE. Lien, Mark // Lighting Design & Application;May2015, Vol. 45 Issue 5, p42 

    The article discusses several lighting technologies other than light emitting diodes (LEDs). Topics include lighting mobile apps for iOS, Windows and Android operating systems, laser diode light sources, and graphene-based LEDs, which combine one-dimensional vertical superlattices with...

  • Diverse fiberoptic systems require varied sources. Hecht, Jeff // Laser Focus World;Jan2000, Vol. 36 Issue 1, p155 

    Discusses factors to be considered in choosing fiberoptic light sources. Light-emitting diode sources; Semiconductor laser sources; Edge-emitting Fabry-Perot lasers; Vertical-cavity surface-emitting lasers.

  • Lateral heterojunctions within monolayer MoSe2-WSe2 semiconductors. Huang, Chunming; Wu, Sanfeng; Sanchez, Ana M.; Peters, Jonathan J. P.; Beanland, Richard; Ross, Jason S.; Rivera, Pasqual; Cobden, David H.; Yao, Wang; Xu, Xiaodong // Nature Materials;Dec2014, Vol. 13 Issue 12, p1096 

    Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers and high-speed transistors. Creating analogous heterojunctions between different 2D semiconductors would enable band engineering within the 2D plane...

  • Kelvin probe force microscopy of hole leakage from the active region of a working injection-type semiconductor laser diode. Ankudinov, A. V.; Evtikhiev, V. P.; Ladutenko, K. S.; Titkov, A. N.; Laiho, R. // Semiconductors;Aug2006, Vol. 40 Issue 8, p982 

    A method that enables direct observation and quantitative characterization of carrier leakage from the active region of working semiconductor light-emitting diodes and lasers is developed on the basis of Kelvinprobe microscopy. The method is used to reveal, on the surface of the mirror surfaces...

  • Superfocusing of mutimode semiconductor lasers and light-emitting diodes. Sokolovskii, G.; Dudelev, V.; Losev, S.; Deryagin, A.; Kuchinskii, V.; Sibbett, W.; Rafailov, E. // Technical Physics Letters;May2012, Vol. 38 Issue 5, p402 

    The problem of focusing multimode radiation of high-power semiconductor lasers and light-emitting diodes (LEDs) has been studied. In these sources, low spatial quality of the output beam determines theoretical limit of the focal spot size (one to two orders of magnitude exceeding the diffraction...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics