Point defect enhanced grain growth in silicon thin films: The role of ion bombardment and dopants

Atwater, Harry A.; Thompson, Carl V.
November 1988
Applied Physics Letters;11/28/1988, Vol. 53 Issue 22, p2155
Academic Journal
We report the results of experiments which test the relationship between the enhanced grain growth rate in polycrystalline silicon films and the enhanced point defect concentration due to dopants and in situ ion bombardment. The experimental data indicate that the contributions to the grain growth rate from ion bombardment and doping are approximately additive, and they agree well with models which relate the grain growth rate to the vacancy concentration at grain boundaries. These results are consistent with the expectation that grain boundary mobilities can be altered through changes in the point defect concentration, regardless of how those changes are generated.


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