Evidence of arsenic-induced surface defects in high-dose As+-implanted rapidly annealed silicon

Kumar, S. N.; Chaussemy, G.; Canut, B.; Laugier, A.
November 1988
Applied Physics Letters;11/28/1988, Vol. 53 Issue 22, p2167
Academic Journal
Examination of Auger transition structures of As and x-ray photoelectron spectra of Si indicates a strong influence of the As ion implantation stage on the surface characteristics of (100) silicon. Rapid thermal annealing resulted in the electrical activation of a major portion of arsenic in the implanted zone, but a shallow region confined within a depth of ≊200 Å from the surface contained As complexed with Si and O atoms. Surface characterization results agree with the observed degradation in transport properties of solar cells constructed on the As+ implanted and rapidly annealed (100) p-silicon substrates.


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