TITLE

Optical observation of subbands in amorphous silicon ultrathin single layers

AUTHOR(S)
Hattori, K.; Mori, T.; Okamoto, H.; Hamakawa, Y.
PUB. DATE
November 1988
SOURCE
Applied Physics Letters;11/28/1988, Vol. 53 Issue 22, p2170
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Wavelength-differential absorption spectroscopy has been applied to amorphous silicon ultrathin single layers. The derivative spectra clearly show a step-like behavior for the layer of the thickness below 40 Ã…, indicating a splitting of the valence and conduction bands into a series of the subbands. Analysis of the observed energy shifts of subband transitions in terms of a one-dimensional quantum well model leads to the conclusion that the electron effective mass is less than 0.48m0, where m0 denotes free-electron mass.
ACCESSION #
9828988

 

Related Articles

  • Enhanced recovery of light-induced degradation on the micromorph solar cells by electric field. Sun, H.-C.; Yang, Y.-J.; Chen, J. Y.; Chao, T.-M.; Liu, C. W.; Lin, W.-Y.; Bi, C.-C.; Yeh, C.-H. // Journal of Applied Physics;Sep2012, Vol. 112 Issue 5, p056104 

    The recovery of light-induced degradation of the tandem micromorph solar cell by applying reverse bias is compared with the single-junction amorphous silicon solar cell. The illuminated current density-voltage characteristics and external quantum efficiency show that the degradation of both the...

  • Defects in preamorphized single-crystal silicon. Ayres, J. R.; Brotherton, S. D.; Shannon, J. M.; Politiek, J. // Applied Physics Letters;11/19/1990, Vol. 57 Issue 21, p2214 

    Direct electrical characterization of 1-μm-thick Si+ preamorphized and epitaxially regrown silicon layers has revealed a low concentration of residual deep-level defects within the regrown layer. A deep-level trap at Ec -0.40 eV has been found associated with the amorphous-crystalline...

  • Evidence of chemical ordering in amorphous hydrogenated silicon carbide. Tafto, J.; Kampas, F. J. // Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p949 

    Amorphous Si0.68C0.32[ATOTHER]@B:[/ATOTHER] H prepared by radio frequency glow discharge from a mixture of methane and silane was studied by means of the complementary techniques of electron energy-loss spectroscopy and electron diffraction. The experimental results are consistent with Si and C...

  • Amorphous transition phase of NiSi2. Vanderwalker, D. M. // Applied Physics Letters;3/17/1986, Vol. 48 Issue 11, p707 

    A glass transition phase forms at the Ni-Si interface as a precursor to NiSi2. The crystalline to amorphous transformation occurs when a sufficient concentration of Ni atoms is present to raise the elastic energy of crystalline Si and lower the energy barrier to the reaction. NiSi2 crystals...

  • Response to ‘‘Comment on ‘Photodegradation in hydrogenated amorphous silicon films at a high level of illumination’ ’’ [Appl. Phys. Lett. 53, 1768 (1988)]. Eser, E.; Urbanski, E. // Applied Physics Letters;10/31/1988, Vol. 53 Issue 18, p1769 

    Responds to a comment on the authors' article about the photodegradation in hydrogenated amorphous silicon films at a high level of illumination, published in a 1988 issue of 'Applied Physics Letters.' Normalized photoresistance of the sample; Different degradation mechanisms operating in the...

  • Reinterpretation of degradation kinetics of amorphous silicon. Redfield, David; Bube, Richard H. // Applied Physics Letters;3/13/1989, Vol. 54 Issue 11, p1037 

    Generation of light-induced metastable defects in amorphous Si:H(a-Si:H) is shown to follow the same stretched exponential (SE) that describes relaxation of thermally induced metastability at room temperature for a simple case. Apparent power laws derived from the central part of the SE are...

  • Observation of light-induced defect formation in hydrogenated amorphous silicon by subgap illumination. Skumanich, Andrew; Fathallah, Mohamed; Amer, Nabil M. // Applied Physics Letters;5/8/1989, Vol. 54 Issue 19, p1887 

    The effect of subgap illumination on the formation of light-induced defects in hydrogenated amorphous silicon was investigated using photothermal deflection spectroscopy. As with broadband illumination, an enhancement in the subgap absorption is observed and is related to the silicon dangling...

  • Heterogeneity and photoconductivity kinetics in amorphous hydrogenated silicon. Kougia, K. V.; Terukov, E. I.; Fus, V. // Semiconductors;Oct98, Vol. 32 Issue 10, p1131 

    A model of the decay kinetics of photoconductivity in amorphous hydrogenated silicon, in which recombination of excess carriers is assumed to occur via tunnelling, is proposed. It is shown that study of the decay shape after flash illumination can be a very effective way to detect structural...

  • Real time in situ observation of the film growth of hydrogenated amorphous silicon by infrared reflection absorption spectroscopy. Toyoshima, Yasutake; Arai, Kazuo; Matsuda, Akihisa; Tanaka, Kazunobu // Applied Physics Letters;4/16/1990, Vol. 56 Issue 16, p1540 

    The growth of hydrogenated amorphous silicon films on Al substrates in a flow reactor was studied using infrared reflection absorption spectroscopy. All three hydride species (SiHx , x=1–3) in the growing films were detected as stretching and bending absorption bands in P polarization...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics