Heteroepitaxial growth of Ge films on Si substrates by molecular beam epitaxy

Zhou, G. L.; Chen, K. M.; Jiang, W. D.; Sheng, C.; Zhang, X. J.; Wang, Xun
November 1988
Applied Physics Letters;11/28/1988, Vol. 53 Issue 22, p2179
Academic Journal
A new approach of growing thick Ge layers on Si substrates by molecular beam epitaxy is presented. A 30–80 Å thick Ge overlayer is first deposited on the Si(100) substrate at room temperature. By thermally annealing the sample to 300 or 500 °C for 10 min, the Ge atoms cluster into randomly distributed islands which would play a role in releasing the mismatch stress at the interface. The Ge film of 10 000 Å thickness epitaxially grown on this surface at 550 °C shows a better crystalline quality than that grown by a conventional method. A full width at half maximum of 262 s for the Ge (400) x-ray diffraction peak has been achieved.


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