Boron profile changes during low-temperature annealing of BF+2-implanted silicon

Kim, Yudong; Massoud, Hisham Z.; Fair, Richard B.
November 1988
Applied Physics Letters;11/28/1988, Vol. 53 Issue 22, p2197
Academic Journal
BF+2 ions were implanted in (100) silicon at room temperature with an energy of 40 keV through a 140-Å-thick SiO2 layer. Boron profiling by secondary-ion mass spectrometry indicates that subsequent annealing in a conventional furnace in the 650–850 °C range for 30–240 min results in a pronounced secondary peak in the B and F profiles, in addition to the near-surface primary peak located in the vicinity of the projected range of the implanted species. This phenomenon was also observed in BF+2 -implanted samples which were rapid thermal annealed at 900 °C for 15–60 s. The depths of the secondary peaks in the B and F profiles correspond to the depths of a damaged layer observed by cross-sectional transmission electron microscopy. Isochronal furnace annealing revealed that there is no chemical interaction between B and F atoms during annealing. This is also supported by the observation of F atoms not affecting the B segregation coefficient during oxidation of the BF+2 -implanted samples. The end-of-range extended dislocations appear to be responsible for the gettering of B and F atoms during annealing.


Related Articles

  • New heterosilocanes, 1,1-difluoroand 1-phenyl-1-fluoro-2,8-dioxa-5-chalcogenosilocanes. Voronkov, M. G.; Trofimova, O. M.; Grebneva, E. A.; Albanov, A. I.; Aksamentova, T. N.; Chipanina, N. N.; Soldatenko, A. S. // Russian Journal of General Chemistry;Jul2010, Vol. 80 Issue 7, p1276 

    The earlier unknown Si-fluorinated 2,8-dioxa-5-chalcogenosilocanes RFSi(OCHCH)Y (R = Ph, F; Y = O, S) were synthesized. According to calculations, there is a weak transannular coordinate interaction Y→Si (Y = O, S), which is much weaker than that in the isostructural quasisilatranes (Y =...

  • Recrystallization Behavior of Aluminum Layers in Al/Ti/Si and Al/Ti/SiOx/Si Structures. Snitovsky, Yu. // Inorganic Materials;Aug2005, Vol. 41 Issue 8, p807 

    The texturing of aluminum in Al/Ti bilayers on (111) Si with and without a low-temperature oxide layer is studied by electron microscopy and x-ray diffraction at different boron and phosphorus concentrations in silicon. The Al layers grown on B-doped Si are shown to have extremely smooth...

  • Doping of p-type shallow junctions using electron beam evaporation of boron layers for.... Zagozdzon-Wosik, W.; Pan, D. // Applied Physics Letters;1/2/1995, Vol. 66 Issue 1, p76 

    Examines the use of electron beam evaporation as a low temperature deposition process of boron and boron/amorphous silicon layers as dopant sources in rapid thermal diffusion. Compatibility of the process with the metal-oxide-semiconductor technology; Use of electronic-beam evaporation;...

  • Effect of pressure loading rate on the crystallographic texture of NdFeB nanocrystalline magnets. Rong, Chuan-bing; Wu, Y. Q.; Wang, Dapeng; Zhang, Ying; Poudyal, Narayan; Kramer, M. J.; Ping Liu, J. // Journal of Applied Physics;Apr2012, Vol. 111 Issue 7, p07A717 

    Plastic deformation of NdFeB nanocrystalline magnets has been performed at relatively low temperatures but high pressures compared to conventional hot deformation. The effect of deformation conditions on the crystallography texture of the anisotropic NdFeB magnets has been studied. It was...

  • The effect of impurity-induced lattice strain and Fermi level position on low temperature oxygen diffusion in silicon. Zhidan Zeng; Murphy, J. D.; Falster, R. J.; Xiangyang Ma; Yang, Deren; Wilshaw, P. R. // Journal of Applied Physics;Mar2011, Vol. 109 Issue 6, p063532 

    Oxygen diffusion in silicon is known to be affected by high concentrations of impurities, although the mechanism underpinning this is poorly understood. We have studied oxygen transport in Czochralski silicon by analyzing data on the locking of dislocations by oxygen as a function of time and...

  • ELECTRO-DEPOSITION PARAMETERS OF BORON CARBONITRIDE (BCN) FROM BORAX PENTAHYDRATE (NA2B4O7.5H2O). TUFAN, Baran; BATAR, Turan // Physicochemical Problems of Mineral Processing;2016, Vol. 52 Issue 1, p136 

    The primary objective of this research is the fabrication of boron end products from boron derivatives by electro-deposition as powder or coating. The production of boron carbonitride is achieved by electro-deposition at low temperatures without carbon dioxide emission, regardless of sintering...

  • Defect reduction by MeV ion implantation for shallow junction formation. Saito, S.; Kumagai, M. // Applied Physics Letters;7/12/1993, Vol. 63 Issue 2, p197 

    Examines the effects of millielectron volt implantation on defects reduction for p-type shallow junction formation. Comparison between the preimplantation of fluorine and boron cations; Application of rapid thermal annealing at 1000-1100 degree Celsius; Suppression of boron-enhanced diffusion.

  • Fluorine and Boron Effects on Vegetation in the Vicinity of a Fiberglass Plant Temple, P. J. // Water, Air & Soil Pollution;Aug1978, Vol. 10 Issue 2, p163 

    No abstract available.

  • Fluorine-enhanced low-temperature wafer bonding of native-oxide covered Si wafers. Tong, Q.-Y.; Gan, Q.; Fountain, G.; Enquist, P.; Scholz, R.; Gösele, U. // Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3731 

    The bonding energy of bonded native-oxide-covered silicon wafers treated in the HNO3/H2O/HF or the HNO3/HF solution prior to room-temperature contact is significantly higher than bonded standard RCA1 cleaned wafer pairs after low-temperature annealing. The bonding energy reaches over 2000 mJ/m2...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics