TITLE

Boron profile changes during low-temperature annealing of BF+2-implanted silicon

AUTHOR(S)
Kim, Yudong; Massoud, Hisham Z.; Fair, Richard B.
PUB. DATE
November 1988
SOURCE
Applied Physics Letters;11/28/1988, Vol. 53 Issue 22, p2197
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
BF+2 ions were implanted in (100) silicon at room temperature with an energy of 40 keV through a 140-Å-thick SiO2 layer. Boron profiling by secondary-ion mass spectrometry indicates that subsequent annealing in a conventional furnace in the 650–850 °C range for 30–240 min results in a pronounced secondary peak in the B and F profiles, in addition to the near-surface primary peak located in the vicinity of the projected range of the implanted species. This phenomenon was also observed in BF+2 -implanted samples which were rapid thermal annealed at 900 °C for 15–60 s. The depths of the secondary peaks in the B and F profiles correspond to the depths of a damaged layer observed by cross-sectional transmission electron microscopy. Isochronal furnace annealing revealed that there is no chemical interaction between B and F atoms during annealing. This is also supported by the observation of F atoms not affecting the B segregation coefficient during oxidation of the BF+2 -implanted samples. The end-of-range extended dislocations appear to be responsible for the gettering of B and F atoms during annealing.
ACCESSION #
9828970

 

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