Comparison of SiIII-SiV and SiIII-VIII diffusion models in III-V heterostructures lattice matched to GaAs

Deppe, D. G.; Plano, W. E.; Baker, J. E.; Holonyak, N.; Ludowise, M. J.; Kuo, C. P.; Fletcher, R. M.; Osentowski, T. D.; Craford, M. G.
November 1988
Applied Physics Letters;11/28/1988, Vol. 53 Issue 22, p2211
Academic Journal
The diffusion of SiIII-SiV neutral pairs versus the diffusion of SiIII-VIII complexes in III-V crystals is compared in the light of experimental data showing the effect of Si diffusion on self-diffusion of column III and column V lattice atoms. Secondary-ion mass spectroscopy is used to compare the enhanced diffusion of column III or column V atoms in several different Si-diffused heterostructures closely lattice matched to GaAs. Enhancement of the lattice-atom self-diffusion, via impurity diffusion, is found to occur predominantly on the column III lattice. Supporting the SiIII-VIII diffusion model, these data indicate that the main native defects accompanying the Si diffusion are column III vacancies, which diffuse directly on the column III sublattice.


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