TITLE

Comparison of SiIII-SiV and SiIII-VIII diffusion models in III-V heterostructures lattice matched to GaAs

AUTHOR(S)
Deppe, D. G.; Plano, W. E.; Baker, J. E.; Holonyak, N.; Ludowise, M. J.; Kuo, C. P.; Fletcher, R. M.; Osentowski, T. D.; Craford, M. G.
PUB. DATE
November 1988
SOURCE
Applied Physics Letters;11/28/1988, Vol. 53 Issue 22, p2211
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The diffusion of SiIII-SiV neutral pairs versus the diffusion of SiIII-VIII complexes in III-V crystals is compared in the light of experimental data showing the effect of Si diffusion on self-diffusion of column III and column V lattice atoms. Secondary-ion mass spectroscopy is used to compare the enhanced diffusion of column III or column V atoms in several different Si-diffused heterostructures closely lattice matched to GaAs. Enhancement of the lattice-atom self-diffusion, via impurity diffusion, is found to occur predominantly on the column III lattice. Supporting the SiIII-VIII diffusion model, these data indicate that the main native defects accompanying the Si diffusion are column III vacancies, which diffuse directly on the column III sublattice.
ACCESSION #
9828961

 

Related Articles

  • Oxidation enhanced diffusion of Si in GaAs: The effect of excess As on diffusion depth and.... Keller, Robert C.; Helms, C.R. // Applied Physics Letters;7/17/1995, Vol. 67 Issue 3, p398 

    Examines the fast diffusion of silicon in gallium arsenide from deposited surface layers oxidized in an Ar/H[sub 2]O ambient indicates excess. Function of the formation of silicon oxide on the surface during oxidation; Production of higher As/Si ratios by higher water partial pressures;...

  • Ga vacancy-assisted diffusion of Si in GaAs. Kahen, K. B. // Journal of Applied Physics;12/15/1989, Vol. 66 Issue 12, p6176 

    Presents study which developed a model for silicon diffusion into gallium arsenide on the formation of Si[subGa][sup+]-V[subGa] pairs. Utilization of the values for the gallium vacancy diffusivity; Demonstration of the results of the model; Characteristic silicon during diffusion.

  • Diffusion kinetics of Si in GaAs and related defect chemistry. Lee, K. H.; Stevenson, D. A.; Deal, M. D. // Journal of Applied Physics;10/15/1990, Vol. 68 Issue 8, p4008 

    Presents a study which investigated the diffusion of silicon in gallium arsenide. Experimental details; Results and discussion; Conclusion.

  • Diffusion and electrical properties of silicon-doped gallium arsenide. Greiner, Mark E.; Gibbons, James F. // Journal of Applied Physics;6/15/1985, Vol. 57 Issue 12, p5181 

    Presents a study which used the amphoteric nature of silicon in gallium arsenide to develop diffusion and electrical compensation mechanisms. Review of silicon diffusion; Model for diffusion of amphoteric dopants in III-V semiconductors.

  • Characteristics of GaAs/AlGaAs heterostructures grown by liquid-phase epitaxy on molecular-beam-coated GaAs on Si. van der Ziel, J. P.; Logan, R. A.; Chand, N. // Journal of Applied Physics;9/15/1988, Vol. 64 Issue 6, p3201 

    Investigates the characteristics of gallium arsenide (GaAs)/aluminum GaAs heterostructures which were grown by liquid-phase epitaxy on molecular-beam-coated gallium arsenide on silicon. Details on the crystal growth of the heterostructures; Information on the optical pumping experiments;...

  • Diffusion and drift of Si dopants in δ-doped n-type AlxGa1-xAs. Schubert, E. F.; Tu, C. W.; Kopf, R. F.; Kuo, J. M.; Lunardi, L. M. // Applied Physics Letters;6/19/1989, Vol. 54 Issue 25, p2592 

    The study of diffusion and drift of Si in AlxGa1-xAs by means of capacitance-voltage measurements reveals that low substrate temperatures during growth by molecular beam epitaxy are required to achieve δ-function-like doping profiles. The diffusion coefficient of Si in Al0.3Ga0.7As is...

  • Defect-related Si diffusion in GaAs on Si. Freundlich, A.; Leycuras, A.; Grenet, J. C.; Grattepain, C. // Applied Physics Letters;12/26/1988, Vol. 53 Issue 26, p2635 

    Preferential diffusion channels of silicon are evidenced in GaAs grown by metalorganic vapor phase epitaxy on Si(100). The density of these diffusion channels is found to be consistent with the measured dislocation density. In addition, combining scanning electron microscopy and x-ray...

  • High-quality eutectic-metal-bonded AlGaAs-GaAs thin films on Si substrates. Venkatasubramanian, R.; Timmons, M.L. // Applied Physics Letters;2/17/1992, Vol. 60 Issue 7, p886 

    Describes an approach to attain high quality gallium arsenide-aluminum gallium arsenide (GaAs-AlGaAs) thin film heterostructures on silicon using eutectic-metal-bonding. Involvement of the lattice-matched growth of thin films on germanium substrates; Presentation of room-temperature...

  • Low threshold buried-heterostructure quantum well lasers by excimer laser assisted disordering. Epler, J. E.; Thornton, R. L.; Mosby, W. J.; Paoli, T. L. // Applied Physics Letters;10/17/1988, Vol. 53 Issue 16, p1459 

    Laser assisted disordering based upon a direct-write Ar+ laser beam has been established as a fabrication technique for high quality optoelectronic devices. In this letter, we report a new form of laser assisted disordering in which an excimer laser beam, photolithographically patterned, is used...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics