TITLE

Reduction of defects and inhomogeneous strain in heteroepitaxial ZnSe

AUTHOR(S)
Skromme, B. J.; Tamargo, M. C.; de Miguel, J. L.; Nahory, R. E.
PUB. DATE
November 1988
SOURCE
Applied Physics Letters;11/28/1988, Vol. 53 Issue 22, p2217
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present low-temperature ZnSe photoluminescence spectra having very narrow bound exciton linewidths (0.55 meV), which demonstrate for the first time that thin, pseudomorphic ZnSe layers with minimal inhomogeneous strain can be grown directly on GaAs by molecular beam epitaxy. Similar characterization of ZnSe/AlAs/GaAs heterostructures shows that AlAs layers up to 4 μm thick exhibit only kinetically limited, partial lattice relaxation, which prevents the overgrowth of uniform, coherently strained ZnSe layers. However, pseudomorphic ZnSe/AlAs/GaAs structures with thin (<=0.5 μm) AlAs layers exhibit the narrowest bound exciton peaks (<=0.37 meV full width at half maximum) ever reported for heteroepitaxial ZnSe, indicating a high degree of structural perfection.
ACCESSION #
9828957

 

Related Articles

  • Study of the band alignment in (Zn,Cd) Se/ZnSe quantum wells by means of photoluminescence... Guenaud, C.; Deleporte, E. // Journal of Applied Physics;2/15/2000, Vol. 87 Issue 4, p1863 

    Presents information on a study which performed a photoluminescence excitation spectroscopy of several (zinc,cadmium)selenium/zinc selenide multiquantum wells. Calculation of the heavy and light-hole excitonic transition energies of the quantum wells; Samples and experimental setup; Comparison...

  • Optical Properties of Zinc Selenide Produced by Isovalent Substitution. Barasyuk, Ya. N.; Makhniy, V. P.; Sletov, M. M.; Stets, E. V. // Russian Physics Journal;Jul2003, Vol. 46 Issue 7, p736 

    The reflectance and photoluminescence spectra of layers of zinc selenide with cubic and hexagonal modifications produced by isovalent substitution are investigated. It is established that the main band in the photoluminescence spectra at 300 K is the edge band associated with the exciton...

  • Exciton-phonon interactions observed in blue emission band in Te-delta-doped ZnSe. Jo, M.; Hayashi, Y.; Kumano, H.; Suemune, I. // Journal of Applied Physics;Aug2008, Vol. 104 Issue 3, p033531 

    Photoluminescence (PL) in the blue wavelength region originating from a no-phonon (NP) transition at 2.734 eV and longitudinal optical (LO) phonon sidebands of Te isoelectronic centers (ICs) were clearly resolved after thermal annealing by δ-doping of Te in ZnSe layers. Broad luminescence...

  • Growth of undoped, high purity, high resistivity ZnSe layers by molecular beam epitaxy. Yoneda, Kiyoshi; Hishida, Yuji; Toda, Tadao; Ishii, Hiroaki; Niina, Tatsuhiko // Applied Physics Letters;1984, Vol. 45 Issue 12, p1300 

    The growth of undoped, high purity ZnSe layers by molecular beam epitaxy with extremely high purity Se source materials refined by sublimation is described. The resistivity of these layers is greater than 104 Ω cm. In low-temperature photoluminescence spectra, only free-exciton emission line...

  • Optical properties of ZnSe/(Zn,Mn)Se multiquantum wells. Hefetz, Y.; Nakahara, J.; Nurmikko, A. V.; Kolodziejski, L. A.; Gunshor, R. L.; Datta, S. // Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p989 

    Luminescence, excitation, and reflectance spectroscopy have been employed to study the exciton ground state in ZnSe/(Zn,MnSe) multiquantum wells. We find that the ground state shows splittings which are attributed to the superlattice layer strain. The measured large magneto-optical shifts and...

  • Response to 'Comment on 'Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe.... Ledentsov, N.N.; Krestnikov, I.L. // Applied Physics Letters;5/19/1997, Vol. 70 Issue 20, p2766 

    Responds to comments on an article regarding ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix. Details on the photoluminescence spectra of the CdSe-ZnSe structures; Indications of the width of the luminescence emission; Information on the exciton-induced waveguiding...

  • Optical studies of ZnSe/ZnMgSSe-based quantum-well semiconductor heterostructures. Platonov, A. V.; Kochereshko, V. P.; Yakovlev, D. R.; Zehnder, U.; Ossau, W.; Faschinger, W.; Landwehr, G. // Physics of the Solid State;May98, Vol. 40 Issue 5, p745 

    Results of an optical study of heterostructures based on new compounds, ZnSe/ZnMgSSe, are presented. The possibility of using these compounds to produce high-quality quantumwell structures having strong exciton features in optical spectra is demonstrated. An analysis of reflectance spectra has...

  • Exciton dynamics in ZnCdSe/ZnSe quantum-well structures. Permogorov, S. A.; Reznitskiı, A. N.; Tenishev, L. N.; Kornievskiı, A. V.; Verbin, S. Yu.; Ivanov, S. V.; Sorokin, S. V.; von der Osten, W.; Stolz, H.; Jütte, M. // Physics of the Solid State;May98, Vol. 40 Issue 5, p743 

    Exciton dynamics in ZnCdSe/ZnSe quantum-well structures have been studied from luminescence spectra obtained at T = 2 K. The energy and phase relaxation times of localized exciton states have been determined from a study of the destruction of exciton optical alignment by an external magnetic...

  • Photoluminescence properties of ZnSe single crystalline films grown by atomic layer epitaxy. Yao, Takafumi; Takeda, Toshihiko; Watanuki, Ryuji // Applied Physics Letters;6/9/1986, Vol. 48 Issue 23, p1615 

    Atomic layer epitaxy has been employed to produce good-quality ZnSe single crystalline films onto (100) oriented GaAs substrates. The epilayers grown at 280 °C exhibited smooth and featureless surface texture and excellent photoluminescence characteristics. They showed dominant excitonic...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics