Interfacial reactions between indium and anodic oxide of mercury cadmium telluride

Lau, W. M.
November 1988
Applied Physics Letters;11/28/1988, Vol. 53 Issue 22, p2161
Academic Journal
The interfacial reaction between indium and anodic oxide of Hg0.8 Cd0.2 Te has been studied using x-ray photoelectron spectroscopy. It was found that the deposition of a thin layer (about 1 nm) of indium by either argon ion sputtering or by direct evaporation reduced some oxidized tellurium of the anodic oxide. The reduced tellurium was extracted to the indium overlayer and present as indium tellurides. However, the thin overlayer on the anodic oxide was found to be partially oxidized but not metallic.


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