TITLE

One-dimensional electronic systems in ultrafine mesa-etched single and multiple quantum well wires

AUTHOR(S)
Demel, T.; Heitmann, D.; Grambow, P.; Ploog, K.
PUB. DATE
November 1988
SOURCE
Applied Physics Letters;11/28/1988, Vol. 53 Issue 22, p2176
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ultrafine mesa-etched structures with lateral geometrical dimensions of 250 to 550 nm have been prepared in modulation-doped AlGaAs/GaAs heterostructures and multiple quantum well systems. From magnetotransport measurements at low temperatures (T=2.2 K) on these single and multiple quantum well wire structures we find that the lateral carrier confinement leads to the formation of one-dimensional electronic subbands of typically 2 meV energy separation. The width of the electron channel is smaller than the geometrical width, indicating a lateral depletion length of about 100 to 150 nm at the mesa edge.
ACCESSION #
9828929

 

Related Articles

  • Energy states of finite-barrier quantum wires in the presence of an external electric field. Juang, C.; Chang, C.Y. // Applied Physics Letters;4/8/1991, Vol. 58 Issue 14, p1527 

    Studies the energy states of finite-barrier quantum wires in the presence of an external electric field. Enhancement of energy level shift in finite-barrier quantum wires systems compared with finite-barrier quantum well systems.

  • Erratum: Kinetic theory of semiconductor cascade laser based on quantum wells and wires [JETP 84, 375—382 (February 1997)]. Elesin, V. F.; Krasheninnikov, A. V. // Journal of Experimental & Theoretical Physics;Nov97, Vol. 85 Issue 5, p1048 

    Presents a corrected version of the list of references in the article 'Kinetic theory of semiconductor cascade laser based on quantum wells and wires,' published in the February 1997 issue of the periodical.

  • Localization-induced blueshift in quantum wires: Direct evidence from magnetophotoluminescence.... Lehr, G.; Harle, V. // Applied Physics Letters;1/22/1996, Vol. 68 Issue 4, p44 

    Investigates localization-induced blueshift in quantum wires. Fabrication of the wires from quantum well materials; Comparison of data with magnetophotoluminescence measurements; Suppression of the transport of excitons between growth islands.

  • Clear energy level shift in ultranarrow InGaAs/InP quantum well wires fabricated by reverse mesa... Notomi, M.; Naganuma, M.; Nishida, T.; Tamamura, T.; Iwamura, H.; Nojima, S.; Okamoto, M. // Applied Physics Letters;2/18/1991, Vol. 58 Issue 7, p720 

    Investigates the clear energy shift in ultranarrow InGaAs/InP quantum well wires fabricated by reverse mesa chemical etching. Reduction in the lateral dimension of the wires; Investigation of the optical characteristics of the wires by photoluminescence.

  • Self-organized GaAs quantum-wire lasers grown on (775) B-oriented GaAs substrates by molecular... Higashiwaki, Masataka; Shimomura, Satoshi; Hiyamizu, Satoshi; Ikawa, Seiji // Applied Physics Letters;2/8/1999, Vol. 74 Issue 6, p780 

    Studies self-organized GaAs/(GaAs)[sub 4](AlAs)[sub 2] quantum-wire lasers grown on B-oriented GaAs substrates by molecular beam epitaxy. Formation of the quantum wires at thick parts in the quantum well; density of the quantum wires; Oscillation of stripe-geometry lasers with the quantum wires...

  • Quantum wires under photoexcitation. Ruda, H.; Shik, A. // Journal of Applied Physics;9/1/1999, Vol. 86 Issue 5, p2719 

    Focuses on a study on the influence of external illumination on the main quantum wire parameters, namely, the linear electron density v and width of the electron channel a. Main photoelectric characteristics of quantum well wires (QWW); Consideration of the impurity and interband optical...

  • Kinetic theory of semiconductor cascade laser based on quantum wells and wires. Elesin, V. F.; Krasheninnikov, A. V. // Journal of Experimental & Theoretical Physics;Feb97, Vol. 84 Issue 2, p375 

    The paper presents a numerical solution of a system of nonlinear equations for the electron distribution functions in the upper and lower subbands between which lasing transitions occur and the number of nonequilibrium optical phonons in semiconducting cascade lasers based on quantum wells and...

  • Charge Carrier Interference in One-Dimensional Semiconductor Rings. Bagraev, N. T.; Buravlev, A. D.; Ivanov, V. K.; Klyachkin, L. E.; Malyarenko, A. M.; Rykov, S. A.; Shelykh, I. A. // Semiconductors;Jul2000, Vol. 34 Issue 7, p817 

    Interference of the ballistic charge carriers in one-dimensional (1D) rings formed by two quantum wires in the self-ordered silicon quantum wells was investigated for the first time. The charge carrier transmission coefficient, which is dependent on the carrier energy, is calculated as a...

  • Low-dimensional thermoelectric materials. Dresselhaus, M. S.; Dresselhaus, G.; Sun, X.; Zhang, Z.; Cronin, S. B.; Koga, T. // Physics of the Solid State;May99, Vol. 41 Issue 5, p679 

    The promise of low dimensional thermoelectric materials for enhanced performance is reviewed, with particular attention given to quantum wells and quantum wires. The high potential of bismuth as a low-dimensional thermoelectric material is discussed.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics