TITLE

Low-energy ion-enhanced deposition of SiO2 in rf magnetron plasmas

AUTHOR(S)
I, Lin; Ting, L. W.
PUB. DATE
November 1988
SOURCE
Applied Physics Letters;11/21/1988, Vol. 53 Issue 21, p2030
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A novel low-temperature (<50 °C) deposition process of a thin SiO2 film in a low-energy ‘‘rf hollow oval magnetron’’ system was studied. O2 is directly mixed with SiH4 and Ar for deposition under the low pressure (<=10 mTorr). The high electron density (1011 cm-3 ) and the high flux low energy (30 eV) ion bombardment greatly enhance the gas phase and surface processes. Uniform and dense thin films with smooth surface and good adhesion have been obtained. The film stoichiometry (from Si to SiO2), the index of refraction, and the film growth rate (from 1 to 35 Å/s) can be controlled by adjusting the SiH4 /O2 flow rates and their ratio.
ACCESSION #
9828902

 

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