New model for the Staebler–Wronski effect in an amorphous silicon hydrogen alloy

Tzeng, Wen-Jer; Lee, Si-Chen
November 1988
Applied Physics Letters;11/21/1988, Vol. 53 Issue 21, p2044
Academic Journal
The photoconductivity decay of an undoped amorphous silicon hydrogen alloy at different substrate temperatures is investigated. A model that attributes defect generation to recombinations through defects is used to describe the degradation kinetics. The typically observed 1/n power law decay with n close to integer can be easily explained using this model. The saturation behavior of photoconductivity suggests that the light-induced annealing process indeed exists near room temperature.


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