TITLE

New model for the Staebler–Wronski effect in an amorphous silicon hydrogen alloy

AUTHOR(S)
Tzeng, Wen-Jer; Lee, Si-Chen
PUB. DATE
November 1988
SOURCE
Applied Physics Letters;11/21/1988, Vol. 53 Issue 21, p2044
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The photoconductivity decay of an undoped amorphous silicon hydrogen alloy at different substrate temperatures is investigated. A model that attributes defect generation to recombinations through defects is used to describe the degradation kinetics. The typically observed 1/n power law decay with n close to integer can be easily explained using this model. The saturation behavior of photoconductivity suggests that the light-induced annealing process indeed exists near room temperature.
ACCESSION #
9828892

 

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