TITLE

New doping method for subhalf micron trench sidewalls by using an electron cyclotron resonance plasma

AUTHOR(S)
Mizuno, B.; Nakayama, I.; Aoi, N.; Kubota, M.; Komeda, T.
PUB. DATE
November 1988
SOURCE
Applied Physics Letters;11/21/1988, Vol. 53 Issue 21, p2059
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new doping method for the vertical sidewall of a trench by electron cyclotron resonance plasma is described. The plasma was produced under a pressure of 5×10-4 Torr. A doped layer was formed uniformly along the sidewall of a trench with subhalf micron width and an aspect ratio of 6.2. By using a de-ionized water cooling system, the wafer temperature was maintained below 120 °C and the boron dopant was introduced without damage to the photoresist.
ACCESSION #
9828881

 

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