Ensemble Monte Carlo simulation of Te-induced intermixing of AlGaAs-based interfaces

Kahen, K. B.
November 1988
Applied Physics Letters;11/21/1988, Vol. 53 Issue 21, p2071
Academic Journal
An ensemble Monte Carlo simulation has been used to model the enhanced disordering of AlGaAs-based interfaces in the presence of high concentrations of Te atoms. The model is based on the experimental finding that the thermal interdiffusion process is similar to the self-diffusion of Ga in GaAs. The model agrees well with the experimental data for both the Ga self-diffusion and intermixing. The intermixing is found to be caused by the enhanced solubility of the Ga vacancy acceptors in the presence of the donor Te atoms, and not as a result of the diffusion of the Te atoms. The activation energy of the process is found to be approximately 2.7 eV.


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