Two-dimensional electron system with extremely low disorder

Shayegan, M.; Goldman, V. J.; Santos, M.; Sajoto, T.; Engel, L.; Tsui, D. C.
November 1988
Applied Physics Letters;11/21/1988, Vol. 53 Issue 21, p2080
Academic Journal
We report on the growth of modulation-doped GaAs/AlxGa1-x As heterostructures with extremely low disorder by molecular beam epitaxy. In growing these structures we employed the atomic plane doping technique and ultrathick (>1000 Å) spacer layers with graded composition. The structures have mobilities (μ) on the order of 1×106 cm2/V s (at 4.2 K) for areal densities (ns) as low as 4×1010 cm-2. Quantum transport measurements in these structures exhibit new fractional quantum Hall states and demonstrate their exceptionally high quality.


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