Radiation damage effects in ion-implanted Bi-Sr-Ca-Cu-O superconducting thin films

Matsui, S.; Matsutera, H.; Yoshitake, T.; Satoh, T.
November 1988
Applied Physics Letters;11/21/1988, Vol. 53 Issue 21, p2096
Academic Journal
Transition temperature (Tc) control and annealing effects of Bi2.0Sr1.4Ca1.8Cu2.2Oy superconducting thin films implanted by 200 keV Ne+ have been investigated. Tc end points for 0.4-μm-thick Bi2.0Sr1.4Ca1.8Cu2.2Oy films for 0, 1×1012, and 1×1013 ions/cm2 doses are 78, 76, and 54 K, respectively. The ion dose, to achieve a nonsuperconductor for Bi2.0Sr1.4Ca1.8Cu2.2Oy films, is two or more orders of magnitude lower than that for YBa2Cu3O7-x films. The c-lattice constant increases were observed for the implanted films. Moreover, it was confirmed that the superconducting characteristics for the implanted films are recovered by annealing in O2 atmosphere.


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