TITLE

Plateau and kink in P profiles diffused into Si: A result of strong bimolecular recombination?

AUTHOR(S)
Richardson, W. B.; Mulvaney, B. J.
PUB. DATE
November 1988
SOURCE
Applied Physics Letters;11/14/1988, Vol. 53 Issue 20, p1917
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A simplified five-species nonequilibrium kinetic model for phosphorus diffusion in silicon is presented. The resulting system of evolution equations is of a simple reaction-diffusion form with constant diffusivities. Using first-order thermodynamic estimates for reaction rates, the phosphorus profile after a 10 min predeposition shows the expected tail. However, only when the bimolecular generation-recombination rate is significantly increased does a kink-plateau result. This suggests that recombination may be the dominant factor in producing the known nonlinearity.
ACCESSION #
9828812

 

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