Intrinsic strain at lattice-matched Ga0.47In0.53As/InP interfaces as studied with high-resolution x-ray diffraction

Vandenberg, J. M.; Panish, M. B.; Temkin, H.; Hamm, R. A.
November 1988
Applied Physics Letters;11/14/1988, Vol. 53 Issue 20, p1920
Academic Journal
High-resolution x-ray studies of Ga0.47In0.53As/InP superlattices reveal, for the first time, the presence of an intrinsic interfacial strain at heteroepitaxial interfaces. This strain is produced by an asymmetric ordering of the atomic layers in the leading and trailing interfaces of each quantum well as the result of the normal growth sequence during gas source molecular beam epitaxy.


Related Articles

  • Absence of Fermi level pinning at metal-InxGa1-xAs(100) interfaces. Brillson, L. J.; Slade, M. L.; Viturro, R. E.; Kelly, M. K.; Tache, N.; Margaritondo, G.; Woodall, J. M.; Kirchner, P. D.; Pettit, G. D.; Wright, S. L. // Applied Physics Letters;5/26/1986, Vol. 48 Issue 21, p1458 

    Soft x-ray photoemission spectroscopy measurements of clean, ordered InxGa1-xAs (100) surfaces with Au, In, Ge, or Al overlayers reveal an unpinned Fermi level across the entire In alloy series. The Fermi level stabilization energies depend strongly on the particular metal and differ...

  • Compositional profile of the amorphous silicon/nitride interface studied with Rutherford backscattering. Abelson, J. R.; Tsai, C. C.; Sigmon, T. W. // Applied Physics Letters;10/6/1986, Vol. 49 Issue 14, p850 

    The compositional profile of the interface between plasma-deposited amorphous silicon (a-Si[ATOTHER]@B:[/ATOTHER] H) and silicon nitride (a-SiNx:H) thin films has been examined using high depth resolution Rutherford backscattering spectrometry. We have optimized the grazing exit angle geometry...

  • Interfacial layer formation of the CdTe/InSb heterointerfaces grown by temperature gradient.... Kim, T.W.; Park, H.L. // Applied Physics Letters;11/14/1994, Vol. 65 Issue 20, p2597 

    Describes the formation of interfacial layer in cadmium telluride (CdTe)/indium antimonide heterointerfaces. Growth of CdTe thin film by temperature gradient vapor transport deposition; Observation of heterostructure stoichiometry by Auger electron spectroscopy; Formation of stacking faults;...

  • Enhanced blocking temperature in NiO spin valves: Role of cubic spinel ferrite layer between pinned layer and NiO. Farrow, R. F. C.; Farrow, R.F.C.; Carey, M. J.; Carey, M.J.; Marks, R. F.; Marks, R.F.; Rice, P. M.; Rice, P.M.; Smith, David J. // Applied Physics Letters;8/21/2000, Vol. 77 Issue 8 

    We compare the blocking temperature for simple permalloy (80% Ni)/Au/permalloy/NiO spin valves with and without an interfacial, oxidized Fe layer (Fe layer 12 Ã… thick) inserted at the permalloy/NiO interface. We find a significantly increased blocking temperature and pinning field for spin...

  • Amorphous phase formation in an as-deposited platinum-GaAs interface. Dae-Hong Ko; Sinclair, Robert // Applied Physics Letters;4/29/1991, Vol. 58 Issue 17, p1851 

    Investigates the presence of a thin amorphous intermixed layer at the platinum-GaAs interface in as-deposited Pt/GaAs and Si/Pt/GaAs samples. Use of high-resolution electron microscopy, microdiffraction and energy dispersive spectroscopy in the study.

  • Special Features of Electron Scattering at Al[sub x]Ga[sub 1 – ][sub x]As/AlAs(001) Interfaces. Grinyaev, S. N.; Karavaev, G. F.; Chernyshov, V. N. // Semiconductors;Apr2003, Vol. 37 Issue 4, p417 

    The effect of total reflection of an electron wave from an interface was investigated for Al[sub x]Ga[sub 1 - x]As/AlAs structures. Analysis was performed on the basis of calculations by the pseudopotential method as well as analytically and numerically in terms of the three-valley model. The...

  • Stress in dc sputtered TiN/B–C–N multilayers. Fayeulle, S.; Nastasi, M. // Journal of Applied Physics;5/15/1997, Vol. 81 Issue 10, p6703 

    Stress in crystalline TiN/amorphous B-C-N multilayered thin films has been determined by the substrate curvature technique. It is established that the total stress is dependent on the number of deposited bilayers and on the bilayer repeat length. The linear relationship between the stress and...

  • Carrier injection characteristics of the metal/organic junctions of organic thin-film devices. Egusa, Syun; Gemma, Nobuhiro; Miura, Akira; Mizushima, Koichi; Azuma, Makoto // Journal of Applied Physics;2/15/1992, Vol. 71 Issue 4, p2042 

    Focuses on a study which investigated the junction characteristics of metal and organic thin film interfaces. Information on the donor and acceptor molecules used; Findings on the threshold bias for carrier injection; Discussion of results.

  • Interface reactions at Cu-Hg1-xCdxTe contacts. Ehsani, H.; Bené, R. W. // Journal of Applied Physics;4/15/1986, Vol. 59 Issue 8, p2808 

    Reports on the results of structural studies of the interfaces between sputter-deposited copper thin films and cadmium-tellerium substrates. Deposition of the thin film structures; Reactions of copper thin films; Time requirements in the deposition.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics