TITLE

Infrared spectroscopy of thin silicon dioxide on silicon

AUTHOR(S)
Olsen, J. E.; Shimura, F.
PUB. DATE
November 1988
SOURCE
Applied Physics Letters;11/14/1988, Vol. 53 Issue 20, p1934
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An infrared technique has been devised to study the structure of very thin films on substrates of high refractive index. Optical spectrum amplification of three orders of magnitude is theoretically available. A series of refractive index enhanced multiple internal reflection spectra reveals a clear thickness-dependent structural transformation in thermal SiO2. The spectra suggest a shift in ring statistics, from smaller to larger, with increasing distance from the oxide-silicon interface.
ACCESSION #
9828800

 

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