Electron diffusion length in rapid thermal processed p-type silicon

Quat, Vu Thuong; Eichhammer, W.; Siffert, P.
November 1988
Applied Physics Letters;11/14/1988, Vol. 53 Issue 20, p1928
Academic Journal
Electron diffusion length in p-type virgin silicon has been measured by the surface photovoltage method after rapid thermal processing as a function of process time duration and process temperature. The results obtained are consistent with a model involving defects acting as a single dominant recombination center induced in the bulk. This recombination center is responsible for the severe degradation of the diffusion length, even at process temperatures as low as 600 °C. An activation energy of 1.48±0.28 eV is found for the center introduction rate. The work shows that the diffusion length measurement is a very sensitive tool in the study of rapid thermal process induced recombination centers in the bulk, with direct correlation to device performance.


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