TITLE

Optimization of quantum well materials and structures for excitonic electroabsorption effects

AUTHOR(S)
Nojima, S.; Wakita, K.
PUB. DATE
November 1988
SOURCE
Applied Physics Letters;11/14/1988, Vol. 53 Issue 20, p1958
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A method to enhance excitonic electroabsorption effects in semiconductor quantum well structures is presented, in which the well thickness and the band gap of the quantum well materials are optimized so that the figure of merit for electroabsorption is maximized. Application of this method to InGaAsP/InP and InGaAlAs/InAlAs quantum well structures enhances this figure of merit by 60 and 16 times, respectively, as compared with that of conventional InGaAs/InP and InGaAs/InAlAs quantum well structures.
ACCESSION #
9828752

 

Related Articles

  • Structure and representations on the quantum supergroup OSP[sub q](2|2n). Zhang, R. B.; Zhang, R.B. // Journal of Mathematical Physics;Sep2000, Vol. 41 Issue 9 

    The structure and representations of the quantum supergroup OSP[sub q](2|2n) are studied systematically. The algebra of functions on the quantum supergroup, which specifies the quantum supergroup itself, is taken to be the superalgebra generated by the matrix elements of the vector...

  • Binary information storage at zero bias in quantum-well diodes. Buot, F. A.; Rajagopal, A. K. // Journal of Applied Physics;11/1/1994, Vol. 76 Issue 9, p5552 

    Focuses on the salient features of an experimental observation on quantum-well diodes with spacer layers. Intrinsic behavior of double-barrier structures; Numerical approaches used for the experimental observation; Proposed physical mechanism used to explain the observation; Description of a...

  • A method for evaluating the ground state excitonic band gaps of strained InxGa1-xN/GaN quantum wells. Sharma, T. K.; Towe, E. // Journal of Applied Physics;Nov2009, Vol. 106 Issue 10, p104509-1 

    A simple method for calculating the ground state excitonic band gaps of strained wurtzite InxGa1-xN/GaN quantum wells (QWs) for the entire composition range is proposed. The modification of the electronic band structure due to strain becomes significant for high values of indium concentration....

  • Buried stressors in nitride semiconductors: Influence on electronic properties. Romanov, A. E.; Waltereit, P.; Speck, J. S. // Journal of Applied Physics;2/15/2005, Vol. 97 Issue 4, p043708 

    An analysis is presented on the effect of the strain field originating from a subsurface stressor (point source of dilatation or a dilatating ellipsoidal inclusion) on the electronic properties of nitride semiconductors. With good accuracy, real quantum dots can be modeled as such stressors. We...

  • Valley splitting in V-shaped quantum wells. Boykin, Timothy B.; Klimeck, Gerhard; von Allmen, Paul; Lee, Seungwon; Oyafuso, Fabiano // Journal of Applied Physics;6/1/2005, Vol. 97 Issue 11, p113702 

    The valley splitting (energy difference between the states of the lowest doublet) in strained silicon quantum wells with a V-shaped potential is calculated variationally using a two-band tight-binding model. The approximation is valid for a moderately long (approximately 5.5–13.5 nm)...

  • Determination of relative internal quantum efficiency in InGaN/GaN quantum wells. Martinez, C. E.; Stanton, N. M.; Kent, A. J.; Graham, D. M.; Dawson, P.; Kappers, M. J.; Humphreys, C. J. // Journal of Applied Physics;9/1/2005, Vol. 98 Issue 5, p053509 

    We have investigated the relative quantum efficiency in a series of InGaN/GaN single quantum wells with differing indium concentration. The results of measurements involving direct detection of phonons emitted as a result of nonradiative recombination and carrier energy relaxation are compared...

  • Relaxation of a strained quantum well at a cleaved surface. Part II: Effect of cubic symmetry. Davies, John H.; Offermans, Peter; Koenraad, Paul M. // Journal of Applied Physics;9/1/2005, Vol. 98 Issue 5, p053504 

    In a previous paper [J. H. Davies, D. M. Bruls, J. W. A. M. Vugs, and P. M. Koenraad, J. Appl. Phys. 91, 4171 (2002). Part I.] we compared theory and experiment for the relaxation at a cleaved surface of a strained quantum well of InGaAs in GaAs. The measurements were taken with a scanning...

  • Photoluminescence property of InGaN single quantum well with embedded AlGaN δ layer. Park, Jongwoon; Kawakami, Yoichi // Applied Physics Letters;5/15/2006, Vol. 88 Issue 20, p202107 

    We investigate the photoluminescence (PL) properties of a thick InGaN single quantum well (SQW) in which an AlGaN δ layer is embedded. The δ layer offers an extra degree of freedom which may be employed to tune the emission wavelength. One of the most salient features of such a QW...

  • Quantum-well saturable absorber at 1.55 μm on GaAs substrate with a fast recombination rate. Le Dû, M.; Harmand, J.-C.; Mauguin, O.; Largeau, L.; Travers, L.; Oudar, J.-L. // Applied Physics Letters;5/15/2006, Vol. 88 Issue 20, p201110 

    We propose and realize a structure designed for fast saturable absorber devices grown on GaAs substrate. The active region consists of a 1.55 μm absorbing GaInNAsSb quantum well (QW) surrounded by two narrow QWs of GaAsN with a N concentration up to 13%. Photoexcited carriers in the GaInNAsSb...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics