Minority-carrier lifetime of magnetic field applied Czochralski silicon wafers

Higuchi, T.; Gaylord, E.; Rozgonyi, G. A.; Shimura, F.
November 1988
Applied Physics Letters;11/7/1988, Vol. 53 Issue 19, p1850
Academic Journal
The dependence of minority-carrier lifetimes and diffusion length on starting silicon materials grown by the magnetic field applied Czochralski (MCZ), conventional Czochralski(CZ), and float-zone (FZ) methods has been investigated with a capacitance-time relaxation technique. MCZ silicon yields longer minority-carrier lifetimes and diffusion length than those of both CZ and FZ silicon materials. The generation lifetime of MCZ silicon increases, while the recombination lifetime decreases, with the initial oxygen concentration. These characteristics are correlated with grown-in defects and gettering by oxygen-related defects.


Related Articles

  • Statistical consideration of grain growth mechanism of multicrystalline Si by one directional solidification technique. Takashi Sekiguchi; Prakash, Ronit R.; Karolin Jiptner; Xianjia Luo; Jun Chen; Yoshiji Miyamura; Hirofumi Harada // Solid State Phenomena;2016, Vol. 242, p35 

    The grain evolution of multicrystalline Si was studied using the ingot grown from microcrystalline template. The grain shape evolution and width increase are not monotonic but may have 3 stages. On the other hand, the grain boundary (GB) analysis suggests that there exit 2 reactions, namely...

  • Approximations to the Whipple solution for grain boundary diffusion and an algorithm... Evans, J.W. // Journal of Applied Physics;7/15/1997, Vol. 82 Issue 2, p628 

    Studies the Whipple model for grain boundary diffusion. Approximations used to calculate solute concentration from the equation provided by Whipple; Algorithm for fitting Whipple's equation to experimental data.

  • The effects of grain boundary diffusion anisotropy on via electromigration failure. Ghiti, A.; O'Neill, A.G. // Journal of Applied Physics;4/1/1997, Vol. 81 Issue 7, p3064 

    Investigates the effects of grain boundary diffusion anisotropy on via electromigration performance involving a three-dimensional computer model. Description of computer model; Focussed ion beam microscopy; Effect of vias in electromigration voiding; Separate metal levels.

  • Improved diffusion barrier by stuffing the grain boundaries of TiN with a thin Al interlayer for Cu metallization. Nam, Ki Tae; Datta, Arindom; Kim, Soo-Hyun; Kim, Ki-Bum // Applied Physics Letters;10/15/2001, Vol. 79 Issue 16, p2549 

    A laterally segregated diffusion barrier was investigated for Cu metallization. In this scheme, the intended final structure is composed of two different barrier materials; one is the parent barrier layer (TiN, in our case) and the other (Al[sub 2]O[sub 3], in this case) is segregated laterally...

  • An improved method, based on Whipple’s exact solution, for obtaining accurate grain-boundary diffusion coefficients from shallow solute concentration gradients. Chung, Yong-Chae; Wuensch, Bernhardt J. // Journal of Applied Physics;6/1/1996, Vol. 79 Issue 11, p8323 

    Presents information on a study that used an equation developed by Le Claire to obtain a grain-boundary diffusion product from the measured solute concentration gradients produced under conditions of constant surface concentration in grain-boundary diffusion experiments. Whipple's solution for...

  • Correlation of critical current and resistance fluctuations in bicrystal grain boundary.... Marx, A.; Fath, U. // Applied Physics Letters;9/25/1995, Vol. 67 Issue 13, p1929 

    Reports the low frequency noise in YBa[sub 2]Cu[sub 3]O[sub 7-delta] and Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub 8+x] grain boundary Josephson junctions fabrication on SrTiO[sub 3] bicrystal substrates. Analysis of amplified junction voltage; Use of an intrinsically shunted junction model; Effect of...

  • On the kinetic mechanism of grain boundary wetting in metals. Glickman, E.E.; Nathan, M. // Journal of Applied Physics;3/15/1999, Vol. 85 Issue 6, p3185 

    Discusses the kinetic mechanism of grain boundary wetting (GBW) in metals. Review of the data on morphology and kinetics of GBW in metals; Description of the `self indentation-internal solution' mechanism of GBW.

  • Bulk Diffusion Is Identifiable.  // JCK;Dec2002, Vol. 173 Issue 12, p30 

    Reports the progress in identifying bulk-diffusion-treated sapphires from Chanthaburi, Thailand. Identification of the materials by standard gemological tests; Use of magnification, immersion and visible spectrum; Focus on color distribution.

  • Grain boundary diffusion of cobalt in polycrystalline tungsten. Arkhipova, N. K.; Kaygorodov, V. N.; Klotsman, S. M.; Kozhevina, E. V. // Journal of Applied Physics;7/15/1992, Vol. 72 Issue 2, p454 

    Presents information on a study which measured parameters of cobalt grain boundary diffusion (GBD) in polycrystalline tungsten. Information on the anodic oxidation method for sectioning diffusion zones; Comparison of the GBD parameters in silver and tungsten; Discussion of the regularities in...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics