Deformation potential and intervalley scattering: Hot-electron transistor analysis

Krishnamurthy, Srinivasan; Sher, A.; Chen, A.-B.
November 1988
Applied Physics Letters;11/7/1988, Vol. 53 Issue 19, p1853
Academic Journal
The coupling constants for the intervalley scattering of electrons by acoustic and optical phonons are calculated based on empirical tight-binding band structures. The calculated intravalley and intervalley scattering rates based on these deformation potentials, polar optical phonon, impurity, and electron-electron interactions successfully explain the observed ratio of collector-to-emitter current as a function of injected electron energy in a GaAs hot-electron transistor.


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