TITLE

Deformation potential and intervalley scattering: Hot-electron transistor analysis

AUTHOR(S)
Krishnamurthy, Srinivasan; Sher, A.; Chen, A.-B.
PUB. DATE
November 1988
SOURCE
Applied Physics Letters;11/7/1988, Vol. 53 Issue 19, p1853
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The coupling constants for the intervalley scattering of electrons by acoustic and optical phonons are calculated based on empirical tight-binding band structures. The calculated intravalley and intervalley scattering rates based on these deformation potentials, polar optical phonon, impurity, and electron-electron interactions successfully explain the observed ratio of collector-to-emitter current as a function of injected electron energy in a GaAs hot-electron transistor.
ACCESSION #
9828697

 

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