Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

Sandstrom, R. L.; Giess, E. A.; Gallagher, W. J.; Segmüller, A.; Cooper, E. I.; Chisholm, M. F.; Gupta, A.; Shinde, S.; Laibowitz, R. B.
November 1988
Applied Physics Letters;11/7/1988, Vol. 53 Issue 19, p1874
Academic Journal
We demonstrate that lanthanum gallate (LaGaO3) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa2Cu3O7-x, can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant (ε[bar_over_tilde:_approx._equal_to]25) and low dielectric losses. Epitaxial YBa2Cu3O7-x films grown on LaGaO3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K.


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