Growth of CdTe-InSb multilayer structures on (100) InSb substrates using molecular beam epitaxy

Williams, G. M.; Whitehouse, C. R.; Cullis, A. G.; Chew, N. G.; Blackmore, G. W.
November 1988
Applied Physics Letters;11/7/1988, Vol. 53 Issue 19, p1847
Academic Journal
Molecular beam epitaxy has been used to grow multilayer structures of CdTe/InSb on (100)InSb substrates. To minimize interdiffusion effects, a particularly low growth temperature was used. This study presents the first transmission electron microscope and secondary-ion mass spectrometer investigations of this multilayer system. The work clearly demonstrates that the multilayers have high structural quality and that there is no large scale interdiffusion of the matrix elements. Roughening is observed at the ‘‘InSb grown on CdTe’’ interface, although only relatively minor undulations are present at the inverted interface. A possible explanation for this effect is described.


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